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Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties
Gallium arsenide (GaAs), intrinsic carrier concentration, electrical and thermal conductivity
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Author(s):
Collaboration: Authors and Editors of the LB Volumes III/17A-22A-41A1b
Publication date
(Print):
2002
Publisher:
Springer-Verlag
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GaAs and Related Materials
Sadao Adachi
(1994)
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Intrinsic densityni(T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients
J. Blakemore
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Acoustical-Optical Phonon Scattering in Ge, Si, and III-V Compounds
E. F. Steigmeier
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I. Kudman
(1966)
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Book Chapter
Pages
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DOI:
10.1007/10832182_196
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1a58a04c-3bcd-4ffd-8e96-ee1de67902fa
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Book chapters
pp. 1
Indium arsenide (InAs), optical constants
pp. 1
Indium antimonide (InSb), electromechanical coupling coefficient
pp. 1
Ga(x)In(1-x)P, further properties
pp. 1
Gallium arsenide (GaAs), optical constants
pp. 1
Grey tin (alpha-Sn), optical properties, dielectric constant
pp. 1
Gallium phosphide (GaP), minority carrier and positron lifetimes, plasmon energy
pp. 1
Silicon (Si), energies of symmetry points of the band structure
pp. 1
Gallium antimonide (GaSb), third order elastic moduli
pp. 1
Aluminum phosphide (AlP), band structure, energies of symmetry points
pp. 1
Silicon (Si), electron mobility
pp. 1
Diamond (C), spin-orbit splitting, interband transition energies
pp. 1
Solid solutions between III-V compounds and group IV elements, data
pp. 1
Gallium antimonide (GaSb), spin-orbit splitting energies
pp. 1
Gallium phosphide (GaP), data from angle integrated photoemission
pp. 1
Indium arsenide (InAs), dielectric constants
pp. 1
Gallium arsenide (GaAs), thermodynamical parameters, vaporization
pp. 1
Grey tin (alpha-Sn), transport properties
pp. 1
Gallium phosphide (GaP), conduction and valence band, effective masses
pp. 1
Aluminum arsenide (AlAs), phonon dispersion, phonon wavenumbers
pp. 1
Grey tin (alpha-Sn), critical point energies
pp. 1
Gallium nitride (GaN), Debye temperature, melting point, density
pp. 1
Silicon carbide (SiC), electron drift velocity, breakdown field
pp. 1
Quaternary alloys of the type III(x)-III(1-x)-V(y)-V(1-y), general remarks
pp. 1
Gallium phosphide (GaP), sound velocities
pp. 1
Gallium phosphide (GaP), transport mechanisms, electrical and thermal conductivity
pp. 1
Boron phosphide (BP), band structure, energy gap
pp. 1
Gallium phosphide (GaP), deformation potentials
pp. 1
Gallium antimonide (GaSb), dielectric constants
pp. 1
Indium phosphide (InP), electrical and thermal conductivity, carrier concentrations
pp. 1
Gallium phosphide (GaP), electron concentration and mobility
pp. 1
Gallium antimonide (GaSb), Nernst coefficient
pp. 1
Gallium arsenide (GaAs), conduction band effective masses and related parameters
pp. 1
Indium antimonide (InSb), hole mobility
pp. 1
Aluminum nitride (AlN), phonon dispersion and wavenumbers, Grüneisen parameters, eff. charge
pp. 1
Indium arsenide (InAs), sound velocities
pp. 1
Diamond (C), exciton binding energy
pp. 1
Grey tin (alpha-Sn), intraband transition energies
pp. 1
Al(x)Ga(1-x)As, further band structure parameters
pp. 1
Indium phosphide (InP), crystal structure, high pressure phases
pp. 1
Aluminum arsenide (AlAs), crystal structure, lattice parameters, thermal expansion
pp. 1
Indium phosphide (InP), Grüneisen constant and parameters
pp. 1
Silicon carbide (SiC), Debye temperature, density, hardness, melting point, thermodyn. functions
pp. 1
Aluminum nitride (AlN), crystal structure, lattice parameters, thermal expansion
pp. 1
Silicon (Si), Seebeck and Nernst coefficients
pp. 1
Indium antimonide (InSb), electrical and thermal transport
pp. 1
Gallium arsenide (GaAs), piezoelectric constants
pp. 1
Diamond (C), elastooptic constants, further optical properties
pp. 1
Gallium antimonide (GaSb), Schottky barriers
pp. 1
Gallium antimonide (GaSb), phonon dispersion, phonon frequencies
pp. 1
Solid solutions between III-V and II-VI compounds, comparative table
pp. 1
Boron nitride (BN), optical properties, dielectric constant, cubic modification
pp. 1
AlAs(1-x)P(x), physical properties
pp. 1
Silicon carbide (SiC), magnetic properties
pp. 1
Ga(x)In(1-x)As(y)P(1-y), physical properties
pp. 1
Gallium arsenide (GaAs), elastic moduli
pp. 1
Silicon (Si), exciton ground and related states, biexitons
pp. 1
Germanium (Ge), phonons participating in indirect transitions
pp. 1
Indium arsenide (InAs), thermodynamical parameters, vaporization
pp. 1
Germanium (Ge), valence band, effective masses
pp. 1
Diamond (C), deformation potentials, electron-hole drop parameters
pp. 1
Aluminum phosphide (AlP), phonon dispersion, phonon wavenumbers
pp. 1
Indium arsenide (InAs), deformation potentials
pp. 1
Germanium (Ge), energy of phonon modes in amorphous samples
pp. 1
Gallium phosphide (GaP), third order elastic moduli
pp. 1
Gallium arsenide (GaAs), electron mobility
pp. 1
Gallium arsenide (GaAs), non-parabolicity and warping parameters
pp. 1
Boron arsenide (BAs), band structure
pp. 1
Indium arsenide (InAs), spin-orbit splitting energies
pp. 1
Aluminum phosphide (AlP), parameters of valence band
pp. 1
Gallium arsenide (GaAs), further optical spectra
pp. 1
Gallium nitride (GaN), optical properties, dielectric constant
pp. 1
Germanium (Ge), magnetoresistance
pp. 1
Gallium nitride (GaN), electrical and thermal conductivity, electron concentration
pp. 1
Gallium antimonide (GaSb), critical point effective mass, spin-orbit splitting valence band
pp. 1
Aluminum arsenide (AlAs), band structure parameters, deformation potentials
pp. 1
Germanium (Ge), plasma energy of valence electrons
pp. 1
Gallium nitride (GaN), effective masses, g-factors, deformation potentials
pp. 1
Indium antimonide (InSb), sets of Kane band parameters (valence band parameters)
pp. 1
Gallium phosphide (GaP), bulk modulus, mode Grüneisen parameters and related data
pp. 1
Gallium arsenide (GaAs), electron drift velocity and diffusion coefficient
pp. 1
Indium phosphide (InP), lattice parameter, thermal expansion
pp. 1
Gallium arsenide (GaAs), Debye temperature, density, heat capacity, melting point
pp. 1
Diamond (C), sound velocity
pp. 1
Indium arsenide (InAs), electron loss, yield and X-ray emission spectroscopy
pp. 1
Indium phosphide (InP), electron-two-phonon deformation potential
pp. 1
Solid solutions between III-V compounds, general remarks
pp. 1
Gallium phosphide (GaP), further optical properties
pp. 1
Gallium nitride (GaN), interband transition and splitting energies
pp. 1
Gallium phosphide (GaP), phonon dispersion, phonon frequencies
pp. 1
Diamond (C), effective masses
pp. 1
GaP(x)Sb(1-x), physical properties
pp. 1
Gallium phosphide (GaP), Young’s moduli and torsional modulus
pp. 1
Aluminum antimonide (AlSb), energy gaps
pp. 1
Indium arsenide (InAs), Debye temperature, density, hardness, melting point
pp. 1
Indium antimonide (InSb), elastic moduli
pp. 1
B(x)Ga(1-x)N, physical data
pp. 1
Gallium antimonide (GaSb), piezoresistance tensor coefficients
pp. 1
Indium antimonide (InSb), magnetoresistance, piezoresistance
pp. 1
Gallium arsenide (GaAs), Hall scattering factor
pp. 1
In(1-x-y)Al(x)Ga(y)Sb, physical properties
pp. 1
Boron nitride (BN), transport properties, hexagonal modification
pp. 1
Germanium (Ge), crystal structure of the various modifications
pp. 1
Gallium arsenide (GaAs), hole mobility and drift velocity
pp. 1
Indium antimonide (InSb), piezooptic constants, piezobirefringence
pp. 1
Diamond (C), Debye temperature, heat capacity, density, hardness, melting point and related data
pp. 1
Silicon (Si), magnetic properties
pp. 1
Grey tin (alpha-Sn), crystal structure, lattice parameter (pure Sn, Sn-IV alloys), thermal expansion
pp. 1
Indium arsenide (InAs), crystal structure, high pressure phases
pp. 1
Silicon (Si), carrier lifetimes, Auger coefficient, plasmons
pp. 1
Grey tin (alpha-Sn), effective masses
pp. 1
Silicon (Si), deformation potentials
pp. 1
Germanium (Ge), piezoresistance coefficients
pp. 1
Indium arsenide (InAs), higher band-band transitions
pp. 1
Germanium (Ge), warm electrons, electron drift velocity
pp. 1
Gallium phosphide (GaP), optical properties involving core level transitions
pp. 1
Indium antimonide (InSb), energy gap
pp. 1
Silicon (Si), normal and high pressure phases, liquid phase
pp. 1
Gallium antimonide (GaSb), thermal conductivity
pp. 1
Indium phosphide (InP), energy gap
pp. 1
Indium antimonide (InSb), two-photon absorption, third order susceptibility
pp. 1
Aluminum arsenide (AlAs), camel’s back structure of the conduction band at X:
pp. 1
Indium phosphide (InP), electron g-factor
pp. 1
Boron nitride (BN), energy gap, width of valence band and related data, cubic modification
pp. 1
B(x)Ga(1-x)As, physical data
pp. 1
Boron nitride (BN), energy gap, effective masses, hexagonal modification
pp. 1
Indium phosphide (InP), bulk and shear moduli
pp. 1
Indium antimonide (InSb), electron mobility
pp. 1
Indium antimonide (InSb), absorption spectra in the vacuum uv
pp. 1
Indium phosphide (InP), optical constants
pp. 1
Aluminum antimonide (AlSb), piezoelectric coefficients
pp. 1
Silicon (Si), optical properties involving core level transitions
pp. 1
Gallium antimonide (GaSb), higher band-band transitions (critical point energies)
pp. 1
Gallium arsenide (GaAs), magnetoresistance
pp. 1
Indium arsenide (InAs), mode Grüneisen parameters, effective charge
pp. 1
Germanium (Ge), band structure
pp. 1
Gallium antimonide (GaSb), heavy and light hole mobilities
pp. 1
Silicon carbide (SiC), refractive index, absorption coefficient, optical spectra
pp. 1
Germanium (Ge), electrostriction coefficients
pp. 1
Indium antimonide (InSb), electron loss, yield and X-ray emission spectroscopy
pp. 1
Gallium arsenide (GaAs), sound velocities
pp. 1
Indium antimonide (InSb), dielectric constants
pp. 1
Boron phosphide (BP), optical properties, dielectric constant
pp. 1
GaAs(1-x)Sb(x), physical properties
pp. 1
Silicon (Si), electron drift velocity, warm electrons, intervalley relaxation time
pp. 1
Indium antimonide (InSb), energies of symmetry points of the band structure
pp. 1
Aluminum antimonide (AlSb), piezooptic and further optical parameters
pp. 1
InP(x)Sb(1-x), physical properties
pp. 1
Diamond (C), energies of symmetry points of the band structure
pp. 1
Indium nitride (InN), electronic properties
pp. 1
Indium phosphide (InP), deformation potentials
pp. 1
Germanium (Ge), data from Raman measurements
pp. 1
Germanium (Ge), elastoresistance coefficients
pp. 1
Indium phosphide (InP), electron mobility
pp. 1
Germanium (Ge), Schottky barrier heights
pp. 1
Diamond (C), energy gaps
pp. 1
Gallium arsenide (GaAs), elastoresistance coefficients
pp. 1
Indium arsenide (InAs), carrier concentrations
pp. 1
Gallium arsenide (GaAs), minority carrier transp., impact ioniz., carrier lifetimes, plasmon energy
pp. 1
Gallium antimonide (GaSb), data for the L and X conduction band minima
pp. 1
Aluminum nitride (AlN), band structure
pp. 1
Aluminum nitride (AlN), Debye temperature, density, hardness, melting point
pp. 1
Gallium phosphide (GaP), magnetoresistance, Seebeck coefficient
pp. 1
Silicon (Si), phonon frequencies
pp. 1
Boron phosphide (BP), phonon energies and wavenumbers
pp. 1
Gallium antimonide (GaSb), band structure, energies of symmetry points
pp. 1
In(1-x-y)Al(x)Ga(y)As, physical properties
pp. 1
Silicon (Si), thermal conductivity
pp. 1
Silicon (Si), phonon dispersion
pp. 1
Gallium phosphide (GaP), optical constants
pp. 1
Gallium phosphide (GaP), refractive index, absorption, reflection, dielectric constants
pp. 1
Aluminum antimonide (AlSb), carrier concentration, Hall scattering factor
pp. 1
Silicon (Si), reflectance, dielectric constants
pp. 1
Aluminum phosphide (AlP), crystal structure, transition pressures
pp. 1
Indium arsenide (InAs), refractive and absorption index, reflectance
pp. 1
Aluminum phosphide (AlP), effective masses
pp. 1
Silicon carbide (SiC), dielectric constants, nonlinear optics
pp. 1
Gallium antimonide (GaSb), deformation potentials
pp. 1
Indium antimonide (InSb), valence band, effective masses
pp. 1
Gallium arsenide (GaAs), core level binding energies, photoionization cross-sections
pp. 1
Indium arsenide (InAs), data from angle integrated photoemission
pp. 1
Silicon (Si), spin-orbit splitting energies, second indirect gap
pp. 1
Gallium phosphide (GaP), valence band parameters
pp. 1
Indium arsenide (InAs), band structure, energies of symmetry points
pp. 1
Gallium arsenide (GaAs), Nernst coefficient
pp. 1
Gallium arsenide (GaAs), phonon dispersion, phonon frequencies and wavenumbers
pp. 1
Aluminum arsenide (AlAs), electrical and thermal conductivity, carrier concentration
pp. 1
Aluminum antimonide (AlSb), elastic moduli, bulk modulus
pp. 1
General Introduction
pp. 1
Aluminum antimonide (AlSb), transport parameters near the melting temperature
pp. 1
Germanium (Ge), spin-orbit splitting energies
pp. 1
Germanium (Ge), heats of fusion and sublimation, enthalpy and entropy, vapor pressure
pp. 1
Gallium arsenide (GaAs), magnetic properties
pp. 1
GaN(x)P(1-x), physical properties
pp. 1
Gallium arsenide (GaAs), electrooptic constants, second and third order nonlinear susceptibilities
pp. 1
Gallium phosphide (GaP), piezoelectric coefficients
pp. 1
Silicon carbide (SiC), crystal structure, unit cells, chemical bond, high pressure phases
pp. 1
Al(x)Ga(1-x)Sb, electronic properties
pp. 1
Silicon (Si), absorption index, absorption coefficient
pp. 1
Germanium (Ge), strain and field dependence of hole mobility
pp. 1
Aluminum antimonide (AlSb), Grüneisen parameters, effective charge
pp. 1
Grey tin (alpha-Sn), band structure
pp. 1
Indium arsenide (InAs), piezoresistance and piezoelectric constants
pp. 1
Al(x)Ga(1-x)As, optical properties
pp. 1
Indium phosphide (InP), transverse effective charge
pp. 1
Germanium (Ge), exciton data
pp. 1
Aluminum antimonide (AlSb), phonon dispersion, phonon wavenumbers and energies
pp. 1
Boron phosphide (BP), impurities and defects
pp. 1
Boron nitride (BN), general remarks and band structure, cubic modification
pp. 1
Germanium (Ge), positron lifetime in Ge
pp. 1
Indium phosphide (InP), data from angle integrated photoemission and Auger spectra
pp. 1
Germanium (Ge), optical properties involving core level transitions
pp. 1
Gallium antimonide (GaSb), Hall scattering factor
pp. 1
Gallium antimonide (GaSb), piezooptic constants, dependence of phonons on uniaxial stress
pp. 1
Gallium phosphide (GaP), energies of symmetry points of the band structure
pp. 1
Gallium arsenide (GaAs), camel’s back structure of X6 conduction band minimum
pp. 1
Boron phosphide (BP), crystal structure, lattice parameters, thermal expansion
pp. 1
Aluminum nitride (AlN), effective masses, valence band parameters of the zincblende modification
pp. 1
Gallium nitride (GaN), mobilities, Seebeck effect
pp. 1
Indium antimonide (InSb), sound velocities
pp. 1
Gallium phosphide (GaP), indirect band gaps
pp. 1
Aluminum antimonide (AlSb), sound velocities
pp. 1
Gallium antimonide (GaSb), electron mobility
pp. 1
Aluminum antimonide (AlSb), further valence band parameter
pp. 1
Indium antimonide (InSb), magnetic properties
pp. 1
Silicon (Si), thermodynamical parameters
pp. 1
Grey tin (alpha-Sn), interband transition energies
pp. 1
Gallium arsenide (GaAs), interband transition energies (critical point energies)
pp. 1
Grey tin (alpha-Sn), magnetic properties
pp. 1
Silicon (Si), Debye temperature, heat capacity, density, hardness, melting point
pp. 1
Germanium (Ge), optical spectra
pp. 1
Gallium antimonide (GaSb), intrinsic carrier concentration, resistivity
pp. 1
Indium phosphide (InP), sound velocities
pp. 1
Aluminum phosphide (AlP), lattice parameter
pp. 1
Germanium (Ge), conduction band, effective masses
pp. 1
Aluminum antimonide (AlSb), optical properties, dielectric constants
pp. 1
Aluminum antimonide (AlSb), electron loss, photoelectric threshold
pp. 1
Gallium antimonide (GaSb), absorption spectrum in the vacuum uv
pp. 1
Gallium nitride (GaN), band structure
pp. 1
InBi(x)As(1-x), physical properties
pp. 1
Indium nitride (InN), density, melting point, thermodynamical parameters, vaporization
pp. 1
Gallium arsenide (GaAs), crystal structure, phases
pp. 1
Aluminum arsenide (AlAs), thermodynamical parameters
pp. 1
Gallium arsenide (GaAs), data from Raman spectra
pp. 1
Silicon carbide (SiC), effective masses
pp. 1
Gallium arsenide (GaAs), piezoresistance tensor coefficients
pp. 1
Grey tin (alpha-Sn), anisotropy parameters, g-factor of light electrons
pp. 1
Ordering effects in Al(x)In(1-x)P, Ga(x)In(1-x)P, Ga(x)In(1-x)As, In(1-x)Sb(x)As
pp. 1
Indium arsenide (InAs), electrical and thermal transport
pp. 1
Indium phosphide (InP), phonon dispersion and frequencies
pp. 1
Diamond (C), magnetic properties
pp. 1
Boron nitride (BN), Debye temperature, heat capacity, density a. rel. parameters, hex. modification
pp. 1
Gallium arsenide (GaAs), typical data for semi-insulating GaAs
pp. 1
Aluminum nitride (AlN), hole mobility, piezoelectric strain coefficients
pp. 1
Gallium arsenide (GaAs), other parameters related to conduction band minima, g-factors
pp. 1
Gallium arsenide (GaAs), spin-orbit splitting energies
pp. 1
Aluminum antimonide (AlSb), impurities and defects
pp. 1
Indium antimonide (InSb), data from angle resolved photoemission
pp. 1
Gallium arsenide (GaAs), exciton ground and excited states
pp. 1
Germanium (Ge), optical constants
pp. 1
Boron nitride (BN), properties of wurtzite-type BN
pp. 1
Gallium phosphide (GaP), lattice parameter, thermal expansion, Grüneisen parameters
pp. 1
Gallium arsenide (GaAs), core level energies
pp. 1
Boron nitride (BN), band structure, hexagonal modification
pp. 1
Gallium antimonide (GaSb), hole mobility
pp. 1
Gallium arsenide (GaAs), reflectance, two-photon absorption
pp. 1
Gallium arsenide (GaAs), Schottky barriers
pp. 1
Gallium arsenide (GaAs), intra- and interband transition energies
pp. 1
Aluminum phosphide (AlP), elastic moduli, bulk modulus
pp. 1
Gallium antimonide (GaSb), refractive index, absorption index and coefficient
pp. 1
Gallium arsenide (GaAs), deformation potentials
pp. 1
Aluminum nitride (AlN), optical properties, dielectric constants, refractive index
pp. 1
Indium phosphide (InP), refractive and absorption index, reflectance
pp. 1
Germanium (Ge), reduced interband masses at critical point transitions
pp. 1
Gallium arsenide (GaAs), refractive index, absorption index, absorption coefficients
pp. 1
Gallium phosphide (GaP), exciton ground state
pp. 1
Gallium antimonide (GaSb), magnetic properties
pp. 1
Al(x)Ga(1-x)P, physical data
pp. 1
Indium phosphide (InP), Seebeck and Nernst coefficients
pp. 1
Aluminum phosphide (AlP), thermodynamical parameters, vaporization
pp. 1
Gallium antimonide (GaSb), second order nonlinear dielectric susceptibilities
pp. 1
Silicon (Si), higher band-band transitions (critical point energies)
pp. 1
Indium phosphide (InP), valence band, effective masses
pp. 1
Aluminum antimonide (AlSb), band structure, energies of symmetry points
pp. 1
Silicon (Si), internal strain, Young’s, torsion and bulk moduli
pp. 1
InAs(1-x-y)Sb(y)P(x), physical properties
pp. 1
Grey tin (alpha-Sn), phonon frequencies, elastic moduli
pp. 1
Silicon (Si), Hall scattering factor
pp. 1
Aluminum phosphide (AlP), band gaps
pp. 1
Gallium phosphide (GaP), thermodynamical data, vaporization
pp. 1
Aluminum antimonide (AlSb), transitions involving core levels
pp. 1
Indium antimonide (InSb), photoelectric threshold, binding energy of core levels
pp. 1
Diamond (C), phonon dispersion, phonon frequencies
pp. 1
Gallium phosphide (GaP), crystal structure of various phases
pp. 1
Silicon (Si), valence band, effective masses
pp. 1
Germanium (Ge), piezooptic and elastooptic constants, birefringence
pp. 1
Indium arsenide (InAs), valence band, effective masses
pp. 1
Gallium arsenide (GaAs), Grüneisen parameters, effective charge
pp. 1
Indium antimonide (InSb), electron g-factor
pp. 1
Silicon (Si), intrinsic carrier concentration
pp. 1
Gallium antimonide (GaSb), Auger coefficient
pp. 1
Boron nitride (BN), transport properties, cubic modification
pp. 1
Indium antimonide (InSb), Seebeck coefficient
pp. 1
Gallium nitride (GaN), thermodynamical parameters, vaporization
pp. 1
Al(x)Ga(1-x)N, physical data
pp. 1
Boron phosphide (BP), Debye temperature, melting point, hardness
pp. 1
Indium antimonide (InSb), spin-orbit splitting energies
pp. 1
Germanium (Ge), g-factor, spin-orbit split-off band
pp. 1
Gallium arsenide (GaAs), data from electron loss, yield and X-ray emission spectroscopy
pp. 1
Silicon (Si), transport mechanism
pp. 1
Diamond (C), electrical and thermal conduction, transport properties
pp. 1
Ga(x)In(1-x)Sb, physical properties
pp. 1
Germanium (Ge), direct and optical energy gap
pp. 1
Germanium (Ge), electron mobility
pp. 1
Boron phosphide (BP), higher energy optical transitions
pp. 1
Boron phosphide (BP), thermodynamical properties
pp. 1
Indium phosphide (InP), Debye temperature, density, hardness
pp. 1
Boron phosphide (BP), deformation potentials
pp. 1
Grey tin (alpha-Sn), Debye temperature, density, bulk modulus, heat capacity
pp. 1
Silicon carbide (SiC), phonon dispersion, phonon frequencies and wavenumbers
pp. 1
Silicon carbide (SiC), band structure, energy gaps
pp. 1
Indium phosphide (InP), thermodynamical parameters, vaporization
pp. 1
Gallium arsenide (GaAs), photoemission data
pp. 1
Germanium (Ge), stopping power for electron energy loss
pp. 1
Germanium (Ge), transport properties in liquid Ge
pp. 1
Germanium (Ge), transport mechanisms, conductivity
pp. 1
GaP(x)As(1-x), physical properties
pp. 1
Silicon (Si), lattice parameter, thermal expansion
pp. 1
Silicon (Si), piezooptic constants
pp. 1
Aluminum antimonide (AlSb), lattice parameter, thermal expansion
pp. 1
Aluminum arsenide (AlAs), effective masses
pp. 1
Indium antimonide (InSb), thermodynamical data, vaporization
pp. 1
Gallium antimonide (GaSb), conduction band, effective masses
pp. 1
Indium nitride (InN), magnetic properties
pp. 1
Silicon (Si), g-factor of electrons
pp. 1
Indium antimonide (InSb), Hall scattering factor
pp. 1
Diamond (C), g-factor, valence band parameters
pp. 1
Gallium antimonide (GaSb), effective charge
pp. 1
Indium arsenide (InAs), phonon dispersion, phonon wavenumbers
pp. 1
Indium phosphide (InP), interband transition and splitting energies
pp. 1
Indium phosphide (InP), transport mechanism
pp. 1
Indium phosphide (InP), hole mobility
pp. 1
Germanium (Ge), critical point energies
pp. 1
Indium nitride (InN), optical properties, dielectric constants
pp. 1
Indium arsenide (InAs), magnetoresistance
pp. 1
Gallium phosphide (GaP), transverse effective charge
pp. 1
Indium arsenide (InAs), second order nonlinear dielectric susceptibility
pp. 1
Silicon carbide (SiC), polytypes
pp. 1
Aluminum antimonide (AlSb), piezo- and elastoresistance
pp. 1
Gallium antimonide (GaSb), critical point energies
pp. 1
Germanium (Ge), indirect energy gap
pp. 1
Indium antimonide (InSb), effective mass and g-value at critical points
pp. 1
Aluminum arsenide (AlAs), Debye temperature, hardness, density, melting point
pp. 1
Silicon (Si), Grüneisen parameters and related data
pp. 1
Gallium arsenide (GaAs), data from photoelectron spectroscopy (ESCA)
pp. 1
Aluminum phosphide (AlP), optical properties, dielectric constants
pp. 1
Gallium arsenide (GaAs), lattice parameter, thermal expansion
pp. 1
Indium arsenide (InAs), elastic moduli
pp. 1
Silicon (Si), i.r. and two-photon absorption, further optical parameters
pp. 1
Aluminum arsenide (AlAs), exciton binding energy
pp. 1
Silicon carbide (SiC), work function
pp. 1
Indium arsenide (InAs), dependence of phonons on uniaxial stress
pp. 1
Al(x)Ga(1-x)Sb, further properties
pp. 1
Germanium (Ge), thermal conductivity
pp. 1
Indium phosphide (InP), hole and positron lifetimes, plasmon dispersion
pp. 1
Aluminum arsenide (AlAs), intra- and interband transition energies, spin-orbit splitting
pp. 1
Aluminum nitride (AlN), thermodynamical parameters, vaporization
pp. 1
Aluminum antimonide (AlSb), electrical and thermal conductivity
pp. 1
Al(x)In(1-x)P, physical properties
pp. 1
Gallium phosphide (GaP), energy gaps, temperature and pressure dependence
pp. 1
Indium phosphide (InP), exciton states and parameters
pp. 1
Aluminum nitride (AlN), energy gap
pp. 1
Indium antimonide (InSb), data from Raman spectroscopy
pp. 1
Indium arsenide (InAs), valence band parameters
pp. 1
Silicon (Si), data from Raman spectra
pp. 1
Diamond (C), general characterization
pp. 1
Gallium phosphide (GaP), Debye temperature, density, hardness, heat capacity
pp. 1
Gallium antimonide (GaSb), higher conduction band minima, energy difference to lowest minimum
pp. 1
InAs(x)Sb(1-x), physical properties
pp. 1
Gallium nitride (GaN), magnetic properties
pp. 1
Al(x)Ga(1-x)As, thermodynamic and structural data, impurities
pp. 1
InP(x)As(1-x), physical properties
pp. 1
Gallium nitride (GaN), crystal structure, lattice param., thermal expansion, high pressure phases
pp. 1
Boron arsenide (BAs), thermodynamical data
pp. 1
Boron nitride (BN), melting point, Debye temperature density, entropy,etc., cubic modification
pp. 1
Aluminum antimonide (AlSb), core level energies
pp. 1
Indium phosphide (InP), dielectric constants
pp. 1
Gallium phosphide (GaP), magnetic properties
pp. 1
Aluminum antimonide (AlSb), exciton binding energy
pp. 1
Aluminum phosphide (AlP), Debye temperature, density, melting point
pp. 1
Indium antimonide (InSb), deformation potentials
pp. 1
Indium arsenide (InAs), conduction band, effective masses
pp. 1
Indium antimonide (InSb), piezoelectric constants
pp. 1
Ga(x)In(1-x)As(y)Sb(1-y), physical properties
pp. 1
Aluminum antimonide (AlSb), critical point energies
pp. 1
Indium arsenide (InAs), electron g-factor, camel’s back structure at conduction band edge
pp. 1
Gallium arsenide (GaAs), intrinsic carrier concentration, electrical and thermal conductivity
pp. 1
Aluminum antimonide (AlSb), Debye temperature, density, hardness, melting point
pp. 1
Boron nitride (BN), interband and core state transition energies, hexagonal modification
pp. 1
Germanium (Ge), refractive index
pp. 1
Indium arsenide (InAs), piezooptic constants, piezobirefringence
pp. 1
Si-Ge, thermodynamic properties
pp. 1
Gallium antimonide (GaSb), thermodynamical parameters
pp. 1
Diamond (C), Grüneisen parameters, Poissons ratio, bulk modulus
pp. 1
Gallium phosphide (GaP), camel’s back structure of conduction band, effective masses
pp. 1
Indium arsenide (InAs), energy gap, exciton data
pp. 1
Indium antimonide (InSb), third order elastic moduli
pp. 1
Gallium antimonide (GaSb), photoel. threshold, core levels, photoionization cross section
pp. 1
Gallium arsenide (GaAs), valence bands, effective masses
pp. 1
Si-Ge, electronic, lattice, transport and opical properties
pp. 1
Indium antimonide (InSb), lattice parameter, thermal expansion
pp. 1
Silicon (Si), band structure
pp. 1
Boron phosphide (BP), electrical and thermal conductivity
pp. 1
Boron antimonide (BSb), physical properties
pp. 1
Indium phosphide (InP), data from Raman spectroscopy
pp. 1
Indium antimonide (InSb), bulk modulus
pp. 1
Indium antimonide (InSb), band structure
pp. 1
Gallium antimonide (GaSb), structure of conduction band minimum and valence band maximum
pp. 1
Gallium phosphide (GaP), direct energy gap
pp. 1
Indium nitride (InN), transport properties
pp. 1
Germanium (Ge), sound velocities
pp. 1
Gallium arsenide (GaAs), electron-two-phonon deformation potentials
pp. 1
Indium phosphide (InP), pressure dependence of dynamical parameters
pp. 1
Indium phosphide (InP), temperature, pressure and concentration dependence of energy gaps
pp. 1
Gallium antimonide (GaSb), elastic moduli
pp. 1
Germanium (Ge), energies of symmetry points of the band structure
pp. 1
In(1-x-y)Al(x)Ga(y)P, physical properties
pp. 1
Aluminum antimonide (AlSb), deformation potentials
pp. 1
Aluminum antimonide (AlSb), hole mobility
pp. 1
Indium arsenide (InAs), Seebeck coefficient
pp. 1
Gallium arsenide (GaAs), valence band parameters
pp. 1
Aluminum antimonide (AlSb), crystal structure of various phases
pp. 1
Silicon carbide (SiC), lattice parameters, thermal expansion
pp. 1
Germanium (Ge), Debye temperature, density, hardness, melting point, heat capacity
pp. 1
Diamond (C), lattice parameters, thermal expansion
pp. 1
Gallium antimonide (GaSb), bulk modulus
pp. 1
Aluminum arsenide (AlAs), energy gaps
pp. 1
Aluminum antimonide (AlSb), spin-orbit splitting energies
pp. 1
Silicon carbide (SiC), carrier concentration, resistivity, mobilities
pp. 1
Indium phosphide (InP), second order nonlinear dielectric susceptibilities
pp. 1
Indium antimonide (InSb), mode Grüneisen parameters, effective charge
pp. 1
Silicon (Si), third order susceptibilities
pp. 1
Aluminum arsenide (AlAs), optical properties, refractive index, dielectric constants
pp. 1
Gallium antimonide (GaSb), optical properties, optical constants
pp. 1
Indium antimonide (InSb), transition pressure to ?-Sn structure
pp. 1
Germanium (Ge), effective number of free electrons
pp. 1
Germanium (Ge), dielectric constant
pp. 1
Germanium (Ge), lattice parameter, thermal expansion
pp. 1
Germanium (Ge), intrinsic carrier concentration
pp. 1
Gallium antimonide (GaSb), valence band, effective masses
pp. 1
Gallium arsenide (GaAs), bulk, Young’s and torsion moduli, internal strain
pp. 1
Aluminum arsenide (AlAs), band structure
pp. 1
Silicon carbide (SiC), mode Grüneisen parameters, sound velocity, elastic moduli, etc.
pp. 1
Gallium arsenide (GaAs), Auger effect
pp. 1
Aluminum nitride (AlN), elastic moduli, bulk modulus
pp. 1
Gallium antimonide (GaSb), conduction band splitting by strain
pp. 1
Gallium phosphide (GaP), critical points of phonon dispersion curves
pp. 1
Indium phosphide (InP), band structure, energies of symmetry points
pp. 1
B(x)Ga(1-x)P, physical data
pp. 1
Aluminum antimonide (AlSb), conduction band, effective masses
pp. 1
Gallium arsenide (GaAs), piezooptic constants, piezobirefringence
pp. 1
Indium antimonide (InSb), carrier concentrations
pp. 1
Gallium arsenide (GaAs), third order elastic moduli
pp. 1
Germanium (Ge), elastic moduli
pp. 1
Gallium antimonide (GaSb), Seebeck coefficient
pp. 1
Al(x)Ga(1-x)As, transport properties
pp. 1
Boron nitride (BN), thermodynamic parameters, vaporization, hexagonal modification
pp. 1
AlN(x)P(1-x), physical properties
pp. 1
Silicon (Si), Schottky barrier heights
pp. 1
Indium phosphide (InP), absorption spectrum in the vacuum uv
pp. 1
Boron nitride (BN), deformation potentials, cubic modification
pp. 1
Indium arsenide (InAs), magnetic properties
pp. 1
Silicon (Si), hole drift velocity and diffusion
pp. 1
Gallium phosphide (GaP), band structure
pp. 1
Aluminum antimonide (AlSb), Seebeck and Nernst coefficient
pp. 1
Aluminum antimonide (AlSb), electron mobility
pp. 1
Indium arsenide (InAs), data from Raman spectroscopy
pp. 1
Indium nitride (InN), lattice properties
pp. 1
Boron nitride (BN), structure, lattice parameter, thermal expansion, hexagonal modification
pp. 1
Indium phosphide (InP), Hall scattering factor, magnetoresistance
pp. 1
Boron nitride (BN), normal pressure and high pressure phases
pp. 1
Germanium (Ge), g-factor of electrons
pp. 1
Aluminum antimonide (AlSb), thermodynamical parameters, vaporization
pp. 1
Silicon (Si), conduction band, effective masses
pp. 1
Germanium (Ge), phonon dispersion, phonon frequencies
pp. 1
Indium antimonide (InSb), Debye temperature, density, hardness, melting point
pp. 1
Indium antimonide (InSb), Nernst, Righi-Leduc and Ettinghausen coefficients
pp. 1
Germanium (Ge), Young’s, torsion and bulk moduli, Grüneisen parameters
pp. 1
Grey tin (alpha-Sn), energies of symmetry points of the band structure
pp. 1
Boron arsenide (BAs), crystal structure, density, Debye temperature
pp. 1
Aluminum arsenide (AlAs), impurities and defects
pp. 1
Indium phosphide (InP), magnetic properties
pp. 1
Gallium arsenide (GaAs), absorption spectrum in the vacuum uv
pp. 1
Aluminum antimonide (AlSb), magnetoresistance
pp. 1
Gallium phosphide (GaP), elastic moduli
pp. 1
Al(x)Ga(1-x)As, lattice properties
pp. 1
Gallium arsenide (GaAs), direct energy gap
pp. 1
Diamond (C), refractive index, dielectric constants
pp. 1
Grey tin (alpha-Sn), impurities and defects
pp. 1
Silicon (Si), direct gap
pp. 1
Indium antimonide (InSb), phonon dispersion and frequencies
pp. 1
Indium antimonide (InSb), optical constants
pp. 1
Boron nitride (BN), effective masses, electron affinity, cubic modification
pp. 1
Indium arsenide (InAs), photoelectric threshold, binding energies of core levels
pp. 1
Gallium phosphide (GaP), pressure dependence of elastic moduli
pp. 1
Al(x)In(1-x)Sb, physical properties
pp. 1
Gallium antimonide (GaSb), Debye temperautre, density, hardness, melting point
pp. 1
Silicon (Si), optical constants
pp. 1
Gallium phosphide (GaP), interband transition and splitting energies
pp. 1
Silicon (Si), plasma energy, energy loss
pp. 1
Al(x)Ga(1-x)As(y)Sb(1-y), physical properties
pp. 1
Diamond (C), elastic moduli
pp. 1
Aluminum nitride (AlN), energies of symmetry points of the band structure, critical point energies
pp. 1
Gallium antimonide (GaSb), lattice parameter, thermal expansion
pp. 1
Silicon (Si), indirect energy gap
pp. 1
Boron nitride (BN), properties of rhombohedral BN
pp. 1
Gallium antimonide (GaSb), data from angle integrated photoemission
pp. 1
Aluminum nitride (AlN), effective masses, valence band parameters
pp. 1
Grey tin (alpha-Sn), Luttinger parameters, deformation potentials
pp. 1
Indium antimonide (InSb), broadening parameters at crit. points, press. and temperature coeff.
pp. 1
Germanium (Ge), magnetic properties
pp. 1
Diamond (C), band structure
pp. 1
Indium arsenide (InAs), Nernst and Righi-Leduc coefficients
pp. 1
Silicon (Si), magnetoresistance
pp. 1
Aluminum nitride (AlN), interband trans. energies, def. potentials, crystal field, spin-orbit splitting
pp. 1
Silicon (Si), third order elastic moduli
pp. 1
Indium antimonide (InSb), conduction band, effective masses
pp. 1
Aluminum arsenide (AlAs), energies of symmetry points of the band structure
pp. 1
Aluminum arsenide (AlAs), sound velocities
pp. 1
Silicon (Si), sound velocities
pp. 1
Boron nitride (BN), phonon wavenumbers, elastic and related parameters, cubic modification
pp. 1
Al(x)Ga(1-x)As, band structure, energy gaps
pp. 1
Gallium antimonide (GaSb), electron loss and yield spectroscopy
pp. 1
Indium phosphide (InP), piezooptic constants, piezobirefringence
pp. 1
Ga(x)In(1-x)N, physical properties
pp. 1
Gallium arsenide (GaAs), indirect energy gap
pp. 1
Boron nitride (BN), phonon frequencies, elastic constants and related properties, hex. modification
pp. 1
Gallium antimonide (GaSb), mode Grüneisen parameters
pp. 1
Aluminum arsenide (AlAs), carrier mobilities, Seebeck coefficient
pp. 1
Indium phosphide (InP), intraband transition energies
pp. 1
Indium antimonide (InSb), impact ionization and recombination rates, Auger recombination
pp. 1
Gallium arsenide (GaAs), transport mechanisms
pp. 1
Indium phosphide (InP), third order elastic moduli
pp. 1
Indium arsenide (InAs), recombination and generation, lifetimes
pp. 1
Germanium (Ge), hole mobility
pp. 1
Silicon (Si), piezo- and elastoresistance coefficients
pp. 1
Aluminum antimonide (AlSb), valence band, effective masses
pp. 1
Silicon (Si), electrical conductivity
pp. 1
Germanium (Ge), third order susceptibilities
pp. 1
Diamond (C), normal pressure and high pressure phases
pp. 1
Gallium antimonide (GaSb), crystal structure, high-pressure phases
pp. 1
Al(x)Ga(1-x)As, effective masses, deformation potentials and related parameters
pp. 1
Indium arsenide (InAs), carrier mobilities, Hall scattering factor
pp. 1
Aluminum phosphide (AlP), impurities and defects
pp. 1
Indium antimonide (InSb), exciton ground state
pp. 1
Indium antimonide (InSb), recombination and positron lifetimes, plasmon energy
pp. 1
Indium antimonide (InSb), higher band-band transitions
pp. 1
Gallium arsenide (GaAs), dielectric constants
pp. 1
Indium phosphide (InP), valence band parameters
pp. 1
Germanium (Ge), Hall scattering factor
pp. 1
Silicon carbide (SiC), exciton binding energy, spin-orbit splitting and interband transition energies
pp. 1
Gallium antimonide (GaSb), exciton ground state
pp. 1
Aluminum phosphide (AlP), electrical and thermal transport
pp. 1
Silicon (Si), hole mobility
pp. 1
Gallium nitride (GaN), enery gap, exciton binding energy
pp. 1
Indium phosphide (InP), Schottky barrier heights
pp. 1
GaN(x)As(1-x), physical properties
pp. 1
Germanium (Ge), higher band-band transitions (critical point energies)
pp. 1
Silicon (Si), refractive index
pp. 1
Boron nitride (BN), structure of valence band, hexagonal modification
pp. 1
Germanium (Ge), valence band parameters
pp. 1
Germanium (Ge), Seebeck and Nernst coefficients
pp. 1
Gallium antimonide (GaSb), valence band parameters
pp. 1
Boron nitride (BN), optical properties, dielectric constants, hexagonal modification
pp. 1
Germanium (Ge), deformation potentials
pp. 1
Indium phosphide (InP), conduction band, effective mass
pp. 1
Gallium antimonide (GaSb), direct energy gap
pp. 1
Indium phosphide (InP), X-ray emission, photoelectric threshold, binding energies of core levels
pp. 1
Gallium nitride (GaN), phonon data, elastic moduli, Grüneisen and rel. parameters
pp. 1
Gallium antimonide (GaSb), transport mechanisms
pp. 1
Ga(x)In(1-x)P, electronic properties
pp. 1
Aluminum arsenide (AlAs), elastic moduli, compliances and derived parameters
pp. 1
Indium arsenide (InAs), lattice parameter, thermal expansion
pp. 1
Silicon (Si), valence band parameters
pp. 1
InBi(x)Sb(1-x), physical properties
pp. 1
Germanium (Ge), third order elastic moduli
pp. 1
Indium arsenide (InAs), absorption spectra in the vacuum uv
pp. 1
Indium phosphide (InP), piezoresistance tensor coefficient
pp. 1
Indium phosphide (InP), electron drift velocity, impact ionization rates
pp. 1
Indium phosphide (InP), elastic moduli
pp. 1
Gallium phosphide (GaP), second order nonlin. dielectric susceptibilities, birefringence, etc.
pp. 1
Gallium antimonide (GaSb), magnetoresistance
pp. 1
Indium antimonide (InSb), refractive and absorption index, reflectance
pp. 1
Silicon carbide (SiC), valence band parameters, deformation potentials
pp. 1
Boron nitride (BN), lattice parameters, cubic modification
pp. 1
Silicon carbide (SiC), thermal conductivity
pp. 1
Al(x)In(1-x)As physical properties
pp. 1
Gallium arsenide (GaAs), Seebeck coefficient
pp. 1
Boron phosphide (BP), elastic moduli, bulk a. shear modulus, mode Grüneisen param., eff. charge
pp. 1
Gallium arsenide (GaAs), energies of symmetry points of the band structure
pp. 1
Indium antimonide (InSb), crystal structure, high pressure phases
pp. 1
Silicon (Si), second order elastic moduli
pp. 1
Gallium phosphide (GaP), hole concentration and mobility
pp. 1
Ga(x)In(1-x)As, physical properties
pp. 1
Gallium antimonide (GaSb), elastoresistance coefficients
pp. 1
Symbols, abbreviations, conversion factors
pp. 1
Boron phosphide (BP), further transport properties
pp. 1
Aluminum nitride (AlN), electrical and thermal conductivity
pp. 1
Aluminum antimonide (AlSb), conduction band, camel’s back structure and effective masses
pp. 1
Indium antimonide (InSb), elastoresistance coefficients
pp. 1
Gallium arsenide (GaAs), band structure
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