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      Gate Dielectrics in Oxide Electronics

      John Wiley & Sons, Ltd

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          Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.

          Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material--namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)--for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V(-1) s(-1), which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9 cm2 V(-1) s(-1), and device characteristics are stable during repetitive bending of the TTFT sheet.
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            High-κ gate dielectrics: Current status and materials properties considerations

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              Thermodynamic stability of binary oxides in contact with silicon

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                Author and book information

                Book
                9781119966999
                9780470683736
                March 13 2012
                March 15 2012
                Book Chapter
                March 15 2012
                : 101-153
                10.1002/9781119966999.ch4
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