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    Review of 'Atomically thin MoS2: A new direct-gap semiconductor'

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    Atomically thin MoS2: A new direct-gap semiconductorCrossref
    Describes electronic properties of ultrathin MoS2 crystals but lacks detailed discussion
    Average rating:
        Rated 3 of 5.
    Level of importance:
        Rated 4 of 5.
    Level of validity:
        Rated 3 of 5.
    Level of completeness:
        Rated 2 of 5.
    Level of comprehensibility:
        Rated 2 of 5.
    Competing interests:
    None

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    Atomically thin MoS2: A new direct-gap semiconductor

    The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 1000 compared with the bulk material.
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      Condensed matter,Nanophysics,Physics

      Review text

      The article is focused on investigating the electronic properties of ultrathin crystals of molybdenum disulfide (MoS2) by optical spectroscopy. The article is well-structured and presents a systematic study of the evolution of the optical properties and electronic structure of ultrathin crystals of MoS2 as a function of thickness. The article provides a detailed explanation of the transition-metal dichalcogenide semiconductor MoS2 and its properties. The experimental techniques used to characterize the samples are also clearly explained.

      The article is well-written and the information is presented in a concise and organized manner. However, there are a few revisions that could improve the article. Firstly, the abstract could be more detailed and include more information about the results obtained from the study. Secondly, the article could benefit from a discussion section where the authors interpret the results obtained and compare them to previous studies.

      The strength of the article lies in its comprehensive study of the evolution of the optical properties and electronic structure of ultrathin crystals of MoS2 as a function of thickness. The experimental techniques used to characterize the samples are also appropriate and clearly explained. However, the article lacks a discussion section where the results obtained are interpreted and compared to previous studies.

      In conclusion, the article is well-written and presents a systematic study of the evolution of the optical properties and electronic structure of ultrathin crystals of MoS2 as a function of thickness. The authors have used appropriate experimental techniques to characterize the samples. However, the article could benefit from a more detailed abstract and a discussion section to interpret the results obtained and compare them to previous studies.

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