ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
2
views
0
references
Top references
cited by
3
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
2,403
similar
All similar
Record
: found
Abstract
: not found
Conference Proceedings
: not found
High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination
proceedings-article
Author(s):
Losee
,
Balachandran
,
Zhu
,
Li
,
Seiler
,
Chow
,
Bhat
,
Gutmann
Publication date
(Print):
2004
Conference name:
IC's
Conference date:
June 27, 2004 - June 27, 2004
Read this article at
ScienceOpen
Publisher
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
UCL Open: Environment
Author and article information
Conference
Publication date:
2004
Publication date (Print):
2004
Pages
: 301-304
Article
DOI:
10.1109/WCT.2004.240032
SO-VID:
a1fe9ea8-4397-4d40-9d8d-b4ed065a4c09
Copyright ©
© 2004
Conference name:
IC's
Conference location:
Kitakyushu, Japan
Conference date:
June 27, 2004 - June 27, 2004
History
Data availability:
Comments
Comment on this article
Sign in to comment
scite_
Similar content
2,403
Counter-Doped JTE, an Edge Termination for HV SiC Devices With Increased Tolerance to the Surface Charge
Authors:
Chih-Fang Huang
,
Hua-Chih Hsu
,
Kuan-Wei Chu
…
Efficacy and safety of topical delgocitinib (JTE-052), janus kinase inhibitor, in Japanese pediatric patients with atopic dermatitis: A phase II, randomized, double-blind, vehicle-controlled study
Authors:
Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation
Authors:
Naoki Kaji
,
Hiroki Niwa
,
Jun Suda
…
See all similar
Cited by
3
Review of Silicon Carbide Power Devices and Their Applications
Authors:
Burak Ozpineci
,
Xu She
,
Oscar Lucia
…
Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices
Authors:
T. Sudarshan
,
Qingchun Zhang
,
A. Agarwal
…
Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC
Authors:
Tsunenobu Kimoto
,
Gan Feng
,
Jun Suda
See all cited by