Structural, magnetic and electrical properties of sputter deposited
  Mn-Fe-Ga thin films

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Abstract

We investigated structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using x-ray diffraction. X-ray reflection and atomic force microscopy measurements were utilized to investigate the surface properties, roughness, thickness and density of the deposited Mn-Fe-Ga. Depending on the stoichiometry, as well as the used substrates (SrTiO3 (001) and MgO (001)) or buffer layer (TiN) the Mn-Fe-Ga crystallizes in the cubic or the tetragonally distorted phase. Anomalous Hall effect and alternating gradient magnetometry measurements confirmed strong perpendicular magnetocrystalline anisotropy. Low saturation magnetization and hard magnetic behavior was reached by tuning the composition. Temperature dependent anomalous Hall effect measurements in a closed cycle He-cryostat showed a slight increase in coercivity with decreasing temperature (300K to 2K). TiN buffered Mn2.7Fe0.3Ga revealed sharper switching of the magnetization compared to the unbuffered layers.

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Valence electron rules for prediction of half-metallic compensated-ferrimagnetic behaviour of Heusler compounds with complete spin polarization

Claudia Felser, Hem Kandpal, Gerhard Fecher … (2006)

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Anomalous Hall Effect in perpendicularly magnetized Mn(_{3-x})Ga thin films

Daniel Ebke, Patrick Thomas, Günter Reiss … (2012)

Mn\(_{3-x}\)Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO\(_3\) substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the crystallographic D0\(_{22}\) phase. The Hall resistivity \(\varrho_{xy}\) was measured in a temperature range from 20 to 330 K. The determined skew scattering and side jump coefficients are discussed with regard to the film composition and used substrate and compared to the crystallographic and magnetic properties.