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      Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

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      Journal: Physical review letters
      Publisher: American Physical Society (APS)

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          Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

          J. C. Bean, R. People (1985)
          Article 0 comments Cited 380 times – based on 0 reviews     Review now
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            Surfactants in epitaxial growth.

            (1989)
            Article 0 comments Cited 270 times – based on 0 reviews     Review now
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              Phänomenologische Theorie der Kristallabscheidung an Oberflächen. I

              Ernst Bauer (1958)
              Article 0 comments Cited 158 times – based on 0 reviews     Review now
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                DOI:: 10.1103/PhysRevLett.64.1943
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                http://link.aps.org/licenses/aps-default-license

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