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      Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

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          Abstract

          Topological insulators are a novel class of quantum matter with a gapped insulating bulk yet gapless spin helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully-tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conducatance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction respectively. Such a system paves the way to explore rich physics ranging from topological magnetoelectric effects to exciton condensation.

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          Two-Dimensional Gas of Massless Dirac Fermions in Graphene

          Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Our studies of graphene - a single atomic layer of carbon - have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; b) graphene's conductivity never falls below a minimum value corresponding to the conductance quantum e^2/h, even when carrier concentrations tend to zero; c) the cyclotron mass m of massless carriers with energy E in graphene is described by equation E =mc*^2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of pi due to Berry's phase.
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            Boron nitride substrates for high-quality graphene electronics

            Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres.
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              Superconducting proximity effect and Majorana fermions at the surface of a topological insulator

              We study the proximity effect between an s-wave superconductor and the surface states of a strong topological insulator. The resulting two dimensional state resembles a spinless p_x+ip_y superconductor, but does not break time reversal symmetry. This state supports Majorana bound states at vortices. We show that linear junctions between superconductors mediated by the topological insulator form a non chiral 1 dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating and fusing Majorana bound states.
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                Author and article information

                Journal
                2015-11-14
                2016-05-09
                Article
                10.1038/ncomms11434
                1511.04597
                0b9fb16d-c392-4f53-9ec4-e102480fae49

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                Nature Communications 7, 11434 (2016)
                24 pages, including 4 figures in main text, 3 figures in supplemental material
                cond-mat.mes-hall

                Nanophysics
                Nanophysics

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