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      Observation of Order-Disorder Transitions in Strained-Semiconductor Systems

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      Physical Review Letters
      American Physical Society (APS)

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          GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

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            Long-Range Order in\({\mathrm{Al}}_{x}{\mathrm{Ga}}_{1-x}\mathrm{As}\)

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              Equilibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. I. The Solubility of Ge and Si in Elements of Groups III, IV and V

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                Author and article information

                Journal
                PRLTAO
                Physical Review Letters
                Phys. Rev. Lett.
                American Physical Society (APS)
                0031-9007
                August 1985
                August 1985
                : 55
                : 7
                : 765-768
                Article
                10.1103/PhysRevLett.55.765
                002e5650-5fee-4b67-9776-dfefd669f025
                © 1985

                http://link.aps.org/licenses/aps-default-license

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