Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

Winters, M; Khosa, R. Y.; Hassan, J.; Sveinbjörnsson, E. Ö.; Rorsman, N.; Karhu, R; Thorsteinsson, E. B.

doi:10.1063/1.5021411

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Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

Author(s): R. Y. Khosa ¹ , E. B. Thorsteinsson ¹ , M. Winters ² , N. Rorsman ² , R. Karhu ³ , J. Hassan ³ , E. Ö. Sveinbjörnsson ¹ ^, ³

Publication date Created: February 2018

Publication date (Print): February 2018

Journal: AIP Advances

Publisher: AIP Publishing

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Most cited references 21

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Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

J. R. Williams, K Mcdonald, M. Di Ventra … (2000)

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Material science and device physics in SiC technology for high-voltage power devices

Tsunenobu Kimoto (2015)

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Band alignment and defect states at SiC/oxide interfaces

S. Dimitrijev, A Stesmans, V V Afanas ev … (2004)

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Journal

Title: AIP Advances

Abbreviated Title: AIP Advances

Publisher: AIP Publishing

ISSN (Electronic): 2158-3226

Publication date Created: February 2018

Publication date (Print): February 2018

Volume: 8

Issue: 2

Page: 025304

Affiliations

[1 ]Science Institute, University of Iceland, IS-107 Reykjavik, Iceland

[2 ]Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden

[3 ]Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials Division, Linköping University, SE-58183 Linköping, Sweden

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DOI: 10.1063/1.5021411

SO-VID: 006cb919-ac3f-4d44-bb6f-1de21e88d918

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Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

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Most cited references 21

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Material science and device physics in SiC technology for high-voltage power devices

Band alignment and defect states at SiC/oxide interfaces

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