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      Comprehensive study of ZnO films prepared by filtered cathodic vacuum arc at room temperature

      , , , , , , ,

      Journal of Applied Physics

      AIP Publishing

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          Most cited references 54

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          Hydrogen as a cause of doping in zinc oxide

          Zinc oxide, a wide-band-gap semiconductor with many technological applications, typically exhibits n-type conductivity. The cause of this conductivity has been widely debated. A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor. This behavior is unexpected and very different from hydrogen's role in other semiconductors, in which it acts only as a compensating center and always counteracts the prevailing conductivity. These insights have important consequences for control and utilization of hydrogen in oxides in general.
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            Mechanisms behind green photoluminescence in ZnO phosphor powders

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              Recent advances in ZnO materials and devices

               D.C. Look (2001)
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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                August 2003
                August 2003
                : 94
                : 3
                : 1597-1604
                10.1063/1.1592007
                © 2003
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