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      Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking

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          Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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            Scattering of electrons at threading dislocations in GaN

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              Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                October 31 2016
                October 31 2016
                : 109
                : 18
                : 182112
                Affiliations
                [1 ]Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich CH-8093, Switzerland
                [2 ]Electron Microscopy Center Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf CH-8600, Switzerland
                [3 ]L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, Milano I-20125, Italy
                [4 ]Institute for Scientific Computing, Technische Universität Dresden, Willers-Bau B – Zellescher Weg 12-14, Dresden D-01062, Germany
                [5 ]L-NESS and Department of Physics, Politecnico di Milano and IFN-CNR, Via Anzani 42, Como I-22100, Italy
                [6 ]CSEM, Rue Jaquet-Droz 1, Neuchâtel CH-2002, Switzerland
                [7 ]Advanced Materials and Surfaces Department Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf CH-8600, Switzerland
                Article
                10.1063/1.4966948
                022a6385-3ae0-4a28-b303-49446cee8a53
                © 2016
                History

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