Terahertz electrical writing speed in an antiferromagnetic memory

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Abstract

We demonstrate terahertz electrical writing speed in an antiferromagnetic memory at an energy of the gigahertz speed writing.

Abstract

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band.

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Spin torque switching with the giant spin Hall effect of tantalum

R A Buhrman, D C Ralph, H Tseng … (2012)

We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.

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The emergence of spin electronics in data storage.

Claude Chappert, Albert Fert, Frederic van Dau (2007)

Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a capacitor to save it. In magnetic recording, magnetic fields have been used to read or write the information stored on the magnetization, which 'measures' the local orientation of spins in ferromagnets. The picture started to change in 1988, when the discovery of giant magnetoresistance opened the way to efficient control of charge transport through magnetization. The recent expansion of hard-disk recording owes much to this development. We are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials. Ultimately, 'spin currents' could even replace charge currents for the transfer and treatment of information, allowing faster, low-energy operations: spin electronics is on its way.

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Current-induced torques in magnetic materials.

Arne Brataas, Andrew Kent, Hideo Ohno (2012)

The magnetization of a magnetic material can be reversed by using electric currents that transport spin angular momentum. In the reciprocal process a changing magnetization orientation produces currents that transport spin angular momentum. Understanding how these processes occur reveals the intricate connection between magnetization and spin transport, and can transform technologies that generate, store or process information via the magnetization direction. Here we explain how currents can generate torques that affect the magnetic orientation and the reciprocal effect in a wide variety of magnetic materials and structures. We also discuss recent state-of-the-art demonstrations of current-induced torque devices that show great promise for enhancing the functionality of semiconductor devices.

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Author and article information

Journal

Journal ID (nlm-ta): Sci Adv

Journal ID (iso-abbrev): Sci Adv

Journal ID (publisher-id): SciAdv

Journal ID (hwp): advances

Title: Science Advances

Publisher: American Association for the Advancement of Science

ISSN (Electronic): 2375-2548

Publication date Collection: March 2018

Publication date (Electronic): 23 March 2018

Volume: 4

Issue: 3

Electronic Location Identifier: eaar3566

Affiliations

[1 ]Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 162 00 Praha 6, Czech Republic.

[2 ]Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany.

[3 ]Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2, Czech Republic.

[4 ]School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.

[5 ]Department of Materials, ETH Zürich, Hönggerbergring 64, CH-8093 Zürich, Switzerland.

[6 ]Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, UK.

[7 ]Institut für Physik, Johannes Gutenberg Universität Mainz, 55128 Mainz, Germany.

[8 ]Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Praha 8, Czech Republic.

[9 ]Department of Physics, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany.

Author notes

[* ]Corresponding author. Email: olejnik@ 123456fzu.cz

Author information

Kamil Olejník http://orcid.org/0000-0002-1023-0358

Tom Seifert http://orcid.org/0000-0001-8163-482X

Vít Novák http://orcid.org/0000-0003-2461-1685

Peter Wadley http://orcid.org/0000-0003-4631-9837

Pietro Gambardella http://orcid.org/0000-0003-0031-9217

Petr Němec http://orcid.org/0000-0001-6867-5942

Joerg Wunderlich http://orcid.org/0000-0003-2631-828X

Tomas Jungwirth http://orcid.org/0000-0002-9910-1674

Article

Publisher ID: aar3566

DOI: 10.1126/sciadv.aar3566

PMC ID: 5938222

PubMed ID: 29740601

SO-VID: 034e5057-7e47-4915-906e-6c8a4cd00e81

Copyright © Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

License:

This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.

History

Date received : 30 October 2017

Date accepted : 08 February 2018

Funding

Funded by: doi http://dx.doi.org/10.13039/100005156, Alexander von Humboldt-Stiftung;

Funded by: doi http://dx.doi.org/10.13039/501100000266, Engineering and Physical Sciences Research Council;

Award ID: EP/K503800/1

Funded by: doi http://dx.doi.org/10.13039/501100000781, European Research Council;

Award ID: 681917

Funded by: doi http://dx.doi.org/10.13039/501100000781, European Research Council;

Award ID: 610115

Funded by: doi http://dx.doi.org/10.13039/501100001659, Deutsche Forschungsgemeinschaft;

Award ID: SPIN+X

Funded by: Ministry of Education of the Czech Republic;

Award ID: LNSM-LNSpin

Funded by: Ministry of Education of the Czech Republic;

Award ID: LNSM-LNSpin

Funded by: Grant Agency of the Czech Republic;

Award ID: 14-37427

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Terahertz electrical writing speed in an antiferromagnetic memory

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Most cited references 42

Spin torque switching with the giant spin Hall effect of tantalum

The emergence of spin electronics in data storage.

Current-induced torques in magnetic materials.

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Cited by 66

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