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      First-principles calculations of the energy barrier to dislocation motion in Si and GaAs

      Author(s): , , ,
      Publication date (Electronic):
      Journal: Physical Review B
      Publisher: American Physical Society (APS)

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          Pseudopotentials that work: From H to Pu

          G. Bachelet, D. R. Hamann, M. Schlüter (1982)
          Article 0 comments Cited 1031 times – based on 0 reviews     Review now
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            On the mobility of partial dislocations in silicon

            H. Alexander, K. Wessel (1977)
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              Atomic and electronic structures of the 90 degrees partial dislocation in silicon.

              Bigger, McInnes, Sutton … (1992)
              Article 0 comments Cited 48 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): PRBMDO
                Title: Physical Review B
                Abbreviated Title: Phys. Rev. B
                Publisher: American Physical Society (APS)
                ISSN (Print): 0163-1829
                ISSN (Electronic): 1095-3795
                Publication date Created: May 1995
                Publication date (Electronic): May 15 1995
                Volume: 51
                Issue: 19
                Pages: 13138-13145
                Article
                DOI: 10.1103/PhysRevB.51.13138
                SO-VID: 03b0bf71-d473-4b11-9fef-f50986d61c32
                Copyright © © 1995
                License:

                http://link.aps.org/licenses/aps-default-license

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