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      Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

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          Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50-2000 eV range

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            Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

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              Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                September 28 2017
                September 28 2017
                : 122
                : 12
                : 125701
                Affiliations
                [1 ]Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
                [2 ]Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin, Germany
                [3 ]Leibniz-Institut für Analytische Wissenschaften ISAS - e.V., Schwarzschildstraße 8, 12493 Berlin, Germany
                [4 ]Humboldt Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, Germany
                [5 ]Technische Universität Chemnitz, Institut für Physik, Reichenhainer Str. 70, 09126 Chemnitz, Germany
                Article
                10.1063/1.4993447
                048a3941-a864-4c2f-81ba-e804f5cd9c30
                © 2017
                History

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