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      Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy

      Author(s): , , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

          Toshio Matsushita, Shuji Nakamura, Masayuki Senoh … (1996)
          Article 0 comments Cited 523 times – based on 0 reviews     Review now
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            Shortest wavelength semiconductor laser diode

            T. Tanaka, S. Sota, H Sakai … (1996)
            Article 0 comments Cited 104 times – based on 0 reviews     Review now
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              Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN

              Takashi Matsuoka (1997)
              Article 0 comments Cited 38 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: August 10 1998
                Publication date (Print): August 10 1998
                Volume: 73
                Issue: 6
                Pages: 830-831
                Article
                DOI: 10.1063/1.122015
                SO-VID: 0491d557-5a28-48d9-a79c-8f2e32a5afff
                Copyright © © 1998
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