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      Comprehensive ‘atomistic’ simulation of statistical variability and reliability in 14 nm generation FinFETs

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      Author(s): , , , , ,
      Publication date (Print):
      Publisher: IEEE
      Conference name: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
      Conference date: October 9, 2015 - October 11, 2015

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          Conference
          Publisher: IEEE
          Publication date: September 2015
          Publication date (Print): September 2015
          Pages: 157-160
          Article
          DOI: 10.1109/SISPAD.2015.7292283
          SO-VID: 04d0b1ef-5ae6-464c-8ead-3d40c92f7d10
          Copyright © © 2015
          Conference name: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
          Conference location: Washington DC, USA
          Conference date: October 9, 2015 - October 11, 2015
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