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      Trends in power semiconductor devices

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          Comparison of 6H-SiC, 3C-SiC, and Si for power devices

          B.J. Baliga, M. Bhatnagar (1993)
          Article 0 comments Cited 173 times – based on 0 reviews     Review now
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            Power semiconductor device figure of merit for high-frequency applications

            B.J. Baliga (1989)
            Article 0 comments Cited 135 times – based on 0 reviews     Review now
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              Semiconductors for high‐voltage, vertical channel field‐effect transistors

              B. J. Baliga (1982)
              Article 0 comments Cited 74 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: IEEE Transactions on Electron Devices
                Abbreviated Title: IEEE Trans. Electron Devices
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 00189383
                Publication date (Print): Oct. 1996
                Volume: 43
                Issue: 10
                Pages: 1717-1731
                Article
                DOI: 10.1109/16.536818
                SO-VID: 04e3f58c-0e4c-453e-81f3-6ca926b703de
                Copyright © © 1996
                History

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