SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition

Li, J.P.; Steckl, A.J.; Yih, P.H.

doi:10.1109/16.275210

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SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition

Author(s): P.H. Yih , J.P. Li , A.J. Steckl

Publication date (Print): March 1994

Journal: IEEE Transactions on Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 27

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Heterostructure bipolar transistors and integrated circuits

H Kroemer (1982)

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Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

J. Anthony Powell, Herbert A. Will, Shigehiro Nishino (1983)

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Electrical properties ofn‐amorphous/p‐crystalline silicon heterojunctions

Hideyo Okushi, Hideharu Matsuura, Kazunobu Tanaka … (1984)

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Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 00189383

Publication date (Print): March 1994

Volume: 41

Issue: 3

Pages: 281-287

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DOI: 10.1109/16.275210

SO-VID: 053abacd-d173-420c-8e75-a726aaa5ba89

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SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition

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Most cited references 27

Heterostructure bipolar transistors and integrated circuits

Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

Electrical properties ofn‐amorphous/p‐crystalline silicon heterojunctions

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