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      Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC

      Author(s): , , , , ,
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

          J.W. Palmour, J.A. Edmond, M Shur … (1991)
          Article 0 comments Cited 94 times – based on 0 reviews     Review now
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            Models and mechanisms of irradiation-induced amorphization in ceramics

            W.J. Weber (2000)
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              Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

              H. Lendenmann, Fanny Dahlquist, N. Johansson … (2001)
              Article 0 comments Cited 43 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: February 15 2003
                Publication date (Print): February 15 2003
                Volume: 93
                Issue: 4
                Pages: 1954-1960
                Article
                DOI: 10.1063/1.1537451
                SO-VID: 05d8577f-a3f8-4832-9bc4-dd2f9beaeb19
                Copyright © © 2003
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