Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures

Grassman, Tyler J; Ringel, Steven A.; De Graef, Marc; McComb, David W; Picard, Yoosuf N.; Carlin, John A.; Deitz, Julia I; Carnevale, Santino D

doi:10.1109/JPHOTOV.2014.2379111

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Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures

Author(s): Santino D. Carnevale , Julia I. Deitz , John A. Carlin , Yoosuf N. Picard , David W. McComb , Marc De Graef , Steven A. Ringel , Tyler J. Grassman

Publication date (Print): March 2015

Journal: IEEE Journal of Photovoltaics

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 22

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Transmission Electron Microscopy

David Williams, C. Carter (2009)

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Charge collection scanning electron microscopy

H. Leamy (1982)

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GaP-nucleation on exact Si (001) substrates for III/V device integration

Wolfgang Stolz, Bernardette Kunert, Igor Németh … (2011)

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Title: IEEE Journal of Photovoltaics

Abbreviated Title: IEEE J. Photovoltaics

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 2156-3381

ISSN (Electronic): 2156-3403

Publication date Created: March 2015

Publication date (Print): March 2015

Volume: 5

Issue: 2

Pages: 676-682

Article

DOI: 10.1109/JPHOTOV.2014.2379111

SO-VID: 069f7554-bc74-4bde-9271-112e29178c64

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Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures

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Electron Channelling Contrast Imaging (ECCI)

Most cited references 22

Transmission Electron Microscopy

Charge collection scanning electron microscopy

GaP-nucleation on exact Si (001) substrates for III/V device integration

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