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      Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation

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      Applied Physics Letters

      AIP Publishing

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          High-κ gate dielectrics: Current status and materials properties considerations

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            Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

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              Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                January 19 2004
                January 19 2004
                : 84
                : 3
                : 389-391
                Article
                10.1063/1.1636532
                © 2004
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