Point defect evolution in low-temperature MOCVD growth of InN

Rauch, Christian; Tuna, Öcal; Giesen, Christoph; Heuken, Michael; Tuomisto, Filip

doi:10.1002/pssa.201100083

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Point defect evolution in low-temperature MOCVD growth of InN

Author(s): Christian Rauch , Öcal Tuna , Christoph Giesen , Michael Heuken , Filip Tuomisto

Publication date Created: January 2012

Publication date (Print): January 2012

Journal: physica status solidi (a)

Publisher: Wiley-Blackwell

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Indium nitride (InN): A review on growth, characterization, and properties

Ashraful Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (2003)

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Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials

D. Vogel, P. Krüger, C Stampfl … (2000)

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Origin of the n-type conductivity of InN: The role of positively charged dislocations

L. F. J. Piper, T D Veal, C. F. McConville … (2006)

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Journal

Title: physica status solidi (a)

Abbreviated Title: Phys. Status Solidi A

Publisher: Wiley-Blackwell

ISSN: 18626300

Publication date Created: January 2012

Publication date (Print): January 2012

Volume: 209

Issue: 1

Pages: 87-90

Article

DOI: 10.1002/pssa.201100083

SO-VID: 0771a071-ec44-44e4-82b2-70cfbb4f37e4

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http://doi.wiley.com/10.1002/tdm_license_1.1

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Point defect evolution in low-temperature MOCVD growth of InN

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Crocodylian evolution

Most cited references 18

Indium nitride (InN): A review on growth, characterization, and properties

Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials

Origin of the n-type conductivity of InN: The role of positively charged dislocations

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