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      Critical layer thicknesses for inclined dislocation stability in multilayer structures

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      Journal of Applied Physics
      AIP Publishing

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          Relaxation of strained‐layer semiconductor structures via plastic flow

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            Defects in epitaxial multilayers

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              A new type of source generating misfit dislocations

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                August 15 1992
                August 15 1992
                : 72
                : 4
                : 1386-1394
                Article
                10.1063/1.351750
                07da2fca-0d6e-4355-a513-aee1d64a5ff6
                © 1992
                History

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