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      Spectral characteristics of external-cavity controlled semiconductor lasers

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      IEEE Journal of Quantum Electronics
      Institute of Electrical and Electronics Engineers (IEEE)

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          Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs

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            Band Structure and Electron Transport of GaAs

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              Refractive index of AlxGa1−xAs between 1.2 and 1.8 eV

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                Author and article information

                Journal
                IEEE Journal of Quantum Electronics
                IEEE J. Quantum Electron.
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9197
                January 1981
                January 1981
                : 17
                : 1
                : 44-59
                Article
                10.1109/JQE.1981.1070634
                085265cc-ed41-4bb4-95dd-90c42872fd8c
                © 1981
                History

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