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Formation of cobalt‐silicidedp+njunctions using implant through silicide technology
November 15 1992
November 15 1992
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Most cited references23
- Record: found
- Abstract: not found
- Article: not found
Formation of thin films of CoSi2: Nucleation and diffusion mechanisms
C.S. Petersson, F.M. D'Heurle (1985)
- Record: found
- Abstract: not found
- Article: not found
Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
J.B. Lasky, J.S. Nakos, O.J. Cain … (1991)
- Record: found
- Abstract: not found
- Article: not found
Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2or Si++B+
M Y Tsai, B. G. Streetman (1979)