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      Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

      Author(s): , , , ,
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          High-κ gate dielectrics: Current status and materials properties considerations

          G. D. Wilk, J. M. Anthony, R. M. Wallace (2001)
          Article 0 comments Cited 951 times – based on 0 reviews     Review now
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            Atomic layer deposition (ALD): from precursors to thin film structures

            Mikko Ritala, Markku Leskelä (2002)
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              Thermochemical properties of inorganic substances

              Ihsan Barin, Ottmar Knacke, Oswald Kubaschewski (1977)
              Book 0 comments Cited 98 times – based on 0 reviews
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: September 15 2004
                Publication date (Print): September 15 2004
                Volume: 96
                Issue: 6
                Pages: 3467-3472
                Article
                DOI: 10.1063/1.1776636
                SO-VID: 09781ca7-0b7e-4fa0-b0a7-9af6625655ec
                Copyright © © 2004
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