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      New model of conduction mechanism in semi‐insulating GaAs

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      Journal of Applied Physics
      AIP Publishing

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          Impurity-Band Tails in the High-Density Limit. I. Minimum Counting Methods

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            Optical and electrical energy gaps in amorphous semiconductors

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              Photoelectronic properties of high‐resistivity GaAs : O

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                January 1979
                January 1979
                : 50
                : 1
                : 349-351
                Article
                10.1063/1.325668
                09f39a41-668b-47d2-ad7a-1abce0256c27
                © 1979
                History

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