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      • Record: found
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      Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN

      Author(s): 1 , 2 , 1 , 2 , 1 , 2
      Publication date Created:
      Publication date (Print):
      Journal: AIP Advances
      Publisher: AIP Publishing

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          Deep‐level defects and n‐type‐carrier concentration in nitrogen implanted GaN

          F. Scholz, M Burkard, D Haase … (1996)
          Article 0 comments Cited 37 times – based on 0 reviews     Review now
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            Deep traps in GaN-based structures as affecting the performance of GaN devices

            Alexander Y. Polyakov, In-Hwan Lee (2015)
            Article 0 comments Cited 33 times – based on 0 reviews     Review now
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              Hydrogen passivation of deep levels in n–GaN

              M. Hansen, S. DenBaars, A Hierro … (2000)
              Article 0 comments Cited 30 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: AIP Advances
                Abbreviated Title: AIP Advances
                Publisher: AIP Publishing
                ISSN (Electronic): 2158-3226
                Publication date Created: February 2019
                Publication date (Print): February 2019
                Volume: 9
                Issue: 2
                Page: 025322
                Affiliations
                [1 ]iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, Denmark
                [2 ]Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C, Denmark
                Article
                DOI: 10.1063/1.5086796
                SO-VID: 0a663a4e-a7d3-4c6c-a5a3-2a18b923b47d
                Copyright © © 2019
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