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      Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

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          Dislocations in strained-layer epitaxy: theory, experiment, and applications

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            Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

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              Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

              W. I. Wang (1984)
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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                December 14 2017
                December 14 2017
                : 122
                : 22
                : 225703
                Affiliations
                [1 ]Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA
                [2 ]Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
                [3 ]Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
                Article
                10.1063/1.5001360
                0ac312e0-84cb-4f2e-9e6a-6ee74af9956c
                © 2017

                https://publishing.aip.org/authors/rights-and-permissions

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