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      Normal Incident Long Wave Infrared Quantum Dash Quantum Cascade Photodetector

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          Abstract

          We demonstrate a quantum dash quantum cascade photodetector (QDash-QCD) by incorporating self-assembled InAs quantum dashes into the active region of a long wave infrared QCD. Sensitive photoresponse to normal incident light at 10 μm was observed, which is attributed to the intersubband (ISB) transitions in the quantum well/quantum dash (QW/QDash) hybrid absorption region and the following transfer of excited electrons on the extraction stair-like quantum levels separated by LO-phonon energy. The high density InAs quantum dashes were formed in the Stranski-Krastanow mode and stair-like levels were formed by a lattice matched InGaAs/InAlAs superlattice. A stable responsivity from 5 mA/W at 77 K to 3 mA/W at as high as 190 K was observed, which makes the QDash-QCD promising in high temperature operation.

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          Most cited references26

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          Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors

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            The theory of quantum-dot infrared phototransistors

            V. Ryzhii (1996)
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              Terahertz range quantum well infrared photodetector

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                Author and article information

                Contributors
                fjwang@semi.ac.cn
                renfei@semi.ac.cn
                liusm@semi.ac.cn
                zhuoning@semi.ac.cn
                zsqlzsmbj@semi.ac.cn
                jqliu@semi.ac.cn
                fqliu@semi.ac.cn
                zgwang@semi.ac.cn
                Journal
                Nanoscale Res Lett
                Nanoscale Res Lett
                Nanoscale Research Letters
                Springer US (New York )
                1931-7573
                1556-276X
                9 September 2016
                9 September 2016
                2016
                : 11
                : 1
                : 392
                Affiliations
                Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083 People’s Republic of China
                Article
                1611
                10.1186/s11671-016-1611-6
                5017976
                27613069
                0ad230e7-50d2-4716-a24a-a23ec496ef7d
                © The Author(s). 2016

                Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

                History
                : 23 August 2016
                : 2 September 2016
                Funding
                Funded by: National Basic Research Program of China
                Award ID: 2013CB632804/02
                Award Recipient :
                Funded by: National Basic Research Program of China
                Award ID: 2014CB643903
                Award Recipient :
                Funded by: FundRef http://dx.doi.org/10.13039/501100001809, National Natural Science Foundation of China;
                Award ID: 11274301
                Award Recipient :
                Funded by: FundRef http://dx.doi.org/10.13039/501100001809, National Natural Science Foundation of China;
                Award ID: 61376501
                Award Recipient :
                Categories
                Nano Express
                Custom metadata
                © The Author(s) 2016

                Nanomaterials
                quantum dash,quantum cascade,infrared detector
                Nanomaterials
                quantum dash, quantum cascade, infrared detector

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