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      Determining the location and nearest neighbours of aluminium in zeolites with atom probe tomography

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          Abstract

          Zeolite catalysis is determined by a combination of pore architecture and Brønsted acidity. As Brønsted acid sites are formed by the substitution of AlO 4 for SiO 4 tetrahedra, it is of utmost importance to have information on the number as well as the location and neighbouring sites of framework aluminium. Unfortunately, such detailed information has not yet been obtained, mainly due to the lack of suitable characterization methods. Here we report, using the powerful atomic-scale analysis technique known as atom probe tomography, the quantitative spatial distribution of individual aluminium atoms, including their three-dimensional extent of segregation. Using a nearest-neighbour statistical analysis, we precisely determine the short-range distribution of aluminium over the different T-sites and determine the most probable Al–Al neighbouring distance within parent and steamed ZSM-5 crystals, as well as assess the long-range redistribution of aluminium upon zeolite steaming.

          Abstract

          Substitution of framework silicon for aluminium in zeolites affects Brønsted acidity and subsequently catalytic activity. Here, the authors use atom probe tomography to obtain quantitative insights into the spatial distribution of individual aluminium atoms, including their distribution and segregation.

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          Most cited references37

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          In situ site-specific specimen preparation for atom probe tomography.

          Techniques for the rapid preparation of atom-probe samples extracted directly from a Si wafer are presented and discussed. A systematic mounting process to a standardized microtip array allows approximately 12 samples to be extracted from a near-surface region and mounted for subsequent focused-ion-beam sharpening in a short period of time, about 2h. In addition, site-specific annular mill extraction techniques are demonstrated that allow specific devices or structures to be removed from a Si wafer and analyzed in the atom-probe. The challenges presented by Ga-induced implantation and damage, particularly at a standard ion-beam accelerating voltage of 30 keV, are shown and discussed. A significant reduction in the extent of the damaged regions through the application of a low-energy "clean-up" ion beam is confirmed by atom-probe analysis of the damaged regions. The Ga+ penetration depth into {100} Si at 30 keV is approximately 40 nm. Clean-up with either a 5 or 2 keV beam reduces the depth of damaged Si to approximately 5 nm and <1 nm, respectively. Finally, a NiSi sample was extracted from a Si wafer, mounted to a microtip array, sharpened, cleaned up with a 5 keV beam and analyzed in the atom probe. The current results demonstrate that specific regions of interest can be accessed and preserved throughout the sample-preparation process and that this preparation method leads to high-quality atom probe analysis of such nano-structures.
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            Structure of synthetic zeolite ZSM-5

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              Crystal structure and structure-related properties of ZSM-5

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                Author and article information

                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Pub. Group
                2041-1723
                02 July 2015
                2015
                : 6
                : 7589
                Affiliations
                [1 ]Pacific Northwest National Laboratory, Environmental Molecular Science Laboratory , 3335 Innovation Boulevard, Richland, Washington 99352, USA
                [2 ]Pacific Northwest National Laboratory, Institute for Integrated Catalysis , 902 Battelle Boulevard, Richland, Washington 99352, USA
                [3 ]Faculty of Science, Debye Institute for Nanomaterials Science, Utrecht University , Universiteitsweg 99, Utrecht 3584 CG, The Netherlands
                [4 ]Department of Chemistry, TU Munich , Lichtenbergstrasse 4, Garching 85748, Germany
                [5 ]UOP LLC, a Honeywell Company , 25 E. Algonquin Road Des Plaines, Illinois 60016, USA
                Author notes
                [*]

                These authors contributed equally to this work.

                Article
                ncomms8589
                10.1038/ncomms8589
                4506508
                26133270
                0ce55a63-3eb9-4801-bee3-f6aa50ee954f
                Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 09 March 2015
                : 21 May 2015
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