15
views
0
recommends
+1 Recommend
0 collections
    3
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Strain relaxation kinetics in Si1−xGex/Si heterostructures

      Journal of Applied Physics
      AIP Publishing

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references36

          • Record: found
          • Abstract: not found
          • Article: not found

          Point defects and dopant diffusion in silicon

            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

                Bookmark

                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                August 15 1991
                August 15 1991
                : 70
                : 4
                : 2136-2151
                Article
                10.1063/1.349451
                0db57894-64ec-4f7b-acb0-ab24f0ab608c
                © 1991
                History

                Comments

                Comment on this article