ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
15
views
36
references
Top references
cited by
91
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
3
shares
Share
Twitter
Sina Weibo
Facebook
Email
2,649
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Strain relaxation kinetics in Si1−xGex/Si heterostructures
Author(s):
D. C. Houghton
Publication date
Created:
August 15 1991
Publication date
(Print):
August 15 1991
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
Read this article at
ScienceOpen
Publisher
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
HR-EBSD (High Resolution - Electron Back Scatter Diffraction)
Most cited references
36
Record
: found
Abstract
: not found
Article
: not found
Point defects and dopant diffusion in silicon
J. Plummer
,
P. Fahey
,
P Griffin
(1989)
0
comments
Cited
327
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
J. C. Bean
,
L Feldman
,
A. Fiory
…
(1984)
0
comments
Cited
222
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
T. B. Light
,
S. Mader
,
J. Matthews
(1970)
0
comments
Cited
170
times
– based on
0
reviews
Review now
Bookmark
All references
Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
August 15 1991
Publication date (Print):
August 15 1991
Volume
: 70
Issue
: 4
Pages
: 2136-2151
Article
DOI:
10.1063/1.349451
SO-VID:
0db57894-64ec-4f7b-acb0-ab24f0ab608c
Copyright ©
© 1991
History
Data availability:
Comments
Comment on this article
Sign in to comment
scite_
Similar content
2,649
Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD
Authors:
Yu Wang
,
Meng Yang
,
Gang Wang
…
Study of the branching ratio and charge asymmetry for the decay KS→πeν with the KLOE detector
Authors:
F. Ambrosino
,
A Antonelli
,
M Antonelli
…
Solvability of nonlocal boundary value problems for ordinary differential equation of higher order with a p-Laplacian
Authors:
Huihui Pang
,
Weigao Ge
,
Min Tian
See all similar
Cited by
90
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
Authors:
Shinhyun Choi
,
Scott Tan
,
Zefan Li
…
Misfit dislocations in lattice-mismatched epitaxial films
Authors:
Robert V Hull
,
John Bean
Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems
Authors:
A Harker
,
S Jain
,
R Cowley
See all cited by
Most referenced authors
238
J Turner
H. Y. Liu
J. TURNER
See all reference authors