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      Comprehensive study of anomalous hysteresis behavior in perovskite-based solar cells

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          Abstract

          Perovskite solar cells (PSCs) have shown remarkable progress with the rapid increase in power conversion efficiency to reach 25.7% over the last few years. However, it is difficult to precisely determine the energy conversion efficiency for PSC, because of anomalous current density-voltage (J–V) hysteresis. Normal J–V hysteresis has been reported in many papers, where the backward scan performance is higher than the forward scan one. In this work, using Drift–Diffusion Modeling, normal hysteretic behavior associated with ion migration with different scanning rates, pre -bias voltages , and charge-carrier mobility is studied. In addition, the inverted J–V hysteresis by modification of the simulation model, where anions and cations flux towards the transport layers and are accumulated simultaneously on both sides, is achieved. It is also found that the flux parameter values (g ae and g ch) play a critical role in the reduction of inverted hysteresis and the efficiency enhancement. It is suggested from the current studies that perovskite interfaces encapsulation, which prevents ions migration, could be of great importance for achieving hysteresis-free PSCs and reliable device characteristics.

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          Understanding the rate-dependent J–V hysteresis, slow time component, and aging in CH3NH3PbI3perovskite solar cells: the role of a compensated electric field

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            Surface optimization to eliminate hysteresis for record efficiency planar perovskite solar cells

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              Evidence for ion migration in hybrid perovskite solar cells with minimal hysteresis

              Ion migration has been proposed as a possible cause of photovoltaic current–voltage hysteresis in hybrid perovskite solar cells. A major objection to this hypothesis is that hysteresis can be reduced by changing the interfacial contact materials; however, this is unlikely to significantly influence the behaviour of mobile ionic charge within the perovskite phase. Here, we show that the primary effects of ion migration can be observed regardless of whether the contacts were changed to give devices with or without significant hysteresis. Transient optoelectronic measurements combined with device simulations indicate that electric-field screening, consistent with ion migration, is similar in both high and low hysteresis CH3NH3PbI3 cells. Simulation of the photovoltage and photocurrent transients shows that hysteresis requires the combination of both mobile ionic charge and recombination near the perovskite-contact interfaces. Passivating contact recombination results in higher photogenerated charge concentrations at forward bias which screen the ionic charge, reducing hysteresis.
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                Author and article information

                Contributors
                elnaz.yazdani@modares.ac.ir
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                1 September 2022
                1 September 2022
                2022
                : 12
                : 14916
                Affiliations
                GRID grid.412266.5, ISNI 0000 0001 1781 3962, Department of Physics, , Tarbiat Modares University, ; P.O. Box 14115-175, Tehran, Iran
                Article
                19194
                10.1038/s41598-022-19194-5
                9436975
                36050358
                0dee6a6c-1ff4-41c2-b5d9-39eace07bf1f
                © The Author(s) 2022

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 25 June 2022
                : 25 August 2022
                Categories
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                © The Author(s) 2022

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                photonic devices,electronics, photonics and device physics,semiconductors
                Uncategorized
                photonic devices, electronics, photonics and device physics, semiconductors

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