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      Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2

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          Journal
          IEEE Transactions on Electron Devices
          IEEE Trans. Electron Devices
          Institute of Electrical and Electronics Engineers (IEEE)
          0018-9383
          1557-9646
          December 2016
          December 2016
          : 63
          : 12
          : 4632-4641
          Article
          10.1109/TED.2016.2616587
          0f786e71-8a6b-4ed2-b79c-073a11ea413d
          © 2016
          History

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