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      Monolithic Germanium/Silicon Photodetectors With Decoupled Structures: Resonant APDs and UTC Photodiodes

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          Most cited references 56

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          High-performance Ge-on-Si photodetectors

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            Electrically pumped hybrid AlGaInAs-silicon evanescent laser.

            An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.
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              High-quality Ge epilayers on Si with low threading-dislocation densities

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                Author and article information

                Journal
                IEEE Journal of Selected Topics in Quantum Electronics
                IEEE J. Select. Topics Quantum Electron.
                Institute of Electrical and Electronics Engineers (IEEE)
                1077-260X
                1558-4542
                November 2014
                November 2014
                : 20
                : 6
                : 43-56
                Article
                10.1109/JSTQE.2014.2322443
                © 2014
                Product

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