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Radiated fields by polygonal core-shell nanowires

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      Abstract

      We calculate the electromagnetic field radiated by tubular nanowires with prismatic geometry and infinite length. The polygonal geometry has implications on the electronic localization; the lowest energy states are localized at the edges of the prism and are separated by a considerable energy gap from the states localized on the facets. This localization can be controlled with external electric or magnetic fields. In particular, by applying a magnetic field transverse to the wire the states may become localized on the lateral regions of the shell, relatively to the direction of the field, leading to channels of opposite currents. Because of the prismatic geometry of the nanowire the current distribution, and hence the radiated electromagnetic field, have an anisotropic structure, which can be modified by the external fields. In this work we study hexagonal, square and triangular nanowires.

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      Most cited references 9

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      Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes.

       Yat Li,  M Lieber,  Jason Wen (2005)
      We report the growth and characterization of core/multishell nanowire radial heterostructures, and their implementation as efficient and synthetically tunable multicolor nanophotonic sources. Core/multishell nanowires were prepared by metal-organic chemical vapor deposition with an n-GaN core and InxGa1-xN/GaN/p-AlGaN/p-GaN shells, where variation of indium mole fraction is used to tune emission wavelength. Cross-sectional transmission electron microscopy studies reveal that the core/multishell nanowires are dislocation-free single crystals with a triangular morphology. Energy-dispersive X-ray spectroscopy clearly shows shells with distinct chemical compositions, and quantitatively confirms that the thickness and composition of individual shells can be well controlled during synthesis. Electrical measurements show that the p-AlGaN/p-GaN shell structure yields reproducible hole conduction, and electroluminescence measurements demonstrate that in forward bias the core/multishell nanowires function as light-emitting diodes, with tunable emission from 365 to 600 nm and high quantum efficiencies. The ability to synthesize rationally III-nitride core/multishell nanowire heterostructures opens up significant potential for integrated nanoscale photonic systems, including multicolor lasers.
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        Electron and hole gas in modulation doped GaAs/AlGaAs radial heterojunctions

        We perform self-consistent Schr\"odinger-Poisson calculations with exchange and correlation corrections to determine the electron/hole gas in a radial hetero-junction formed in a modulation doped GaAs/AlGaAs core-multi-shell nanowire (CSNW) which is n-/p-doped. Realistic composition and geometry are mapped on an symmetry compliant two-dimensional grid, and the inversion/accumulation layers are obtained assuming mid-gap Fermi energy pinning at the surface. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping level. Contrary to planar hetero-junctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between i) an isotropic, cylindrical distribution deep in the GaAs core (low doping), and ii) a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface and form either i) six separated planar 2DEGs at the GaAs/AlGaAs interfaces (low doping), ii) a quasi uniform six-fold bent 2DEG (intermediate doping), or iii) six tunnel-coupled quasi-1D channels at the edges (high doping). We also simulate the electron/hole gas in a CSNW-based field effect transistor. The field generated by a back-gate may easily deform the electron or hole gas, breaking the six-fold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.
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          Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes.

          The electronic properties of thin, nanometer scale GaAs quantum well tubes embedded inside the AlGaAs shell of a GaAs core-multishell nanowire are investigated using optical spectroscopies. Using numerical simulations to model cylindrically and hexagonally symmetric systems, we correlate these electronic properties with structural characterization by aberration-corrected scanning transmission electron microscopy of nanowire cross sections. These tubular quantum wells exhibit extremely high quantum efficiency and intense emission for extremely low submicrowatt excitation powers in both photoluminescence and photoluminescence excitation measurements. Numerical calculations of the confined eigenstates suggest that the electrons and holes in their ground states are confined to extremely localized one-dimensional filaments at the corners of the hexagonal structure which extend along the length of the nanowire.
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            Author and article information

            Journal
            21 April 2018
            1804.07959

            http://arxiv.org/licenses/nonexclusive-distrib/1.0/

            Custom metadata
            4 pages, 3 figures
            cond-mat.mes-hall

            Nanophysics

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