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      Mechanical properties of individual InAs nanowires studied by tensile tests

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          Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers

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            High electron mobility InAs nanowire field-effect transistors.

            Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier field-effect mobility and carrier concentration by taking into account series and leakage resistances, interface state capacitance, and top-gate geometry. Both the back-gate and the top-gate NWFETs exhibit room-temperature field-effect mobility as high as 6580 cm(2) V(-1) s(-1), which is the lower-bound value without interface-capacitance correction, and is the highest mobility reported to date in any semiconductor NW.
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              Relation between Elastic Tensors of Wurtzite and Zinc-Blende Structure Materials

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                March 10 2014
                March 10 2014
                : 104
                : 10
                : 103110
                10.1063/1.4868133
                © 2014
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