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      Silicene nanomesh

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          Abstract

          Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.

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          Generalized Gradient Approximation Made Simple.

          Gary H. Perdew, Ernzerhof, M Perdew … (1997)
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            Two and one-dimensional honeycomb structures of silicon and germanium

            Salim Ciraci, Hasan Sahin, Ethem Akturk … (2008)
            Based on first-principles calculations of structure optimization, phonon modes and finite temperature molecular dynamics, we predict that silicon and germanium have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, they are ambipolar and their charge carriers can behave like a massless Dirac fermions due to their pi- and pi*-bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.
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              Tunable bandgap in silicene and germanene.

              Zeyuan Ni, Qihang Liu, Kechao Tang … (2012)
              By using ab initio calculations, we predict that a vertical electric field is able to open a band gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap in both silicene and germanene increase linearly with the electric field strength. Ab initio quantum transport simulation of a dual-gated silicene field effect transistor confirms that the vertical electric field opens a transport gap, and a significant switching effect by an applied gate voltage is also observed. Therefore, biased single-layer silicene and germanene can work effectively at room temperature as field effect transistors. © 2011 American Chemical Society
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                Author and article information

                Journal
                Journal ID (nlm-ta): Sci Rep
                Journal ID (iso-abbrev): Sci Rep
                Title: Scientific Reports
                Publisher: Nature Publishing Group
                ISSN (Electronic): 2045-2322
                Publication date (Electronic): 13 March 2015
                Publication date Collection: 2015
                Volume: 5
                Electronic Location Identifier: 9075
                Affiliations
                [1 ]Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University , Xi′an 710072, P. R. China
                [2 ]Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China
                [3 ]State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University , Beijing 100871, P. R. China
                [4 ]School of Physics and Telecommunication Engineering, Shaanxi University of Technology , Hanzhong 723001, P. R. China
                [5 ]School of Physics and Nuclear Energy Engineering, Beihang University , Beijing 100191, P. R. China
                [6 ]School of Advanced Materials, Peking University, Shenzhen Graduate School , Shenzhen 518055, P. R. China
                [7 ]Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, P. R. China
                Author notes
                [*]

                These authors contributed equally to this work.

                Article
                Publisher Item ID: srep09075
                DOI: 10.1038/srep09075
                PMC ID: 4649852
                PubMed ID: 25766672
                SO-VID: 11dc6bb8-070d-46a9-8ab5-24ecb1a7df08
                Copyright © Copyright © 2015, Macmillan Publishers Limited. All rights reserved
                License:

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                Date received : 10 September 2014
                Date accepted : 03 February 2015
                Categories
                Subject: Article

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