- Record: found
- Abstract: not found
- Article: not found
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
H. Marchand ,
X. H. Wu ,
J. P. Ibbetson ,
P. T. Fini ,
P. Kozodoy ,
S. Keller ,
J. S. Speck ,
S. P. DenBaars ,
U. K. Mishra
August 10 1998
August 10 1998
Read this article at
ScienceOpenPublisher
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Most cited references14
- Record: found
- Abstract: not found
- Article: not found
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
Akira Usui, A. Yamaguchi, Akira Sakai … (1997)
- Record: found
- Abstract: not found
- Article: not found
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
Ok-Hyun Nam, Robert F. Davis, Tsvetanka S. Zheleva … (1997)
- Record: found
- Abstract: not found
- Article: not found
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
Robert F. Davis, Tsvetanka S. Zheleva, Ok-Hyun Nam … (1997)