Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

Schmid, H.; Borg, M.; Moselund, K.; Gignac, L.; Breslin, C. M.; Bruley, J; Cutaia, D.; Riel, H.

doi:10.1063/1.4921962

Record: found
Abstract: not found
Article: not found

Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

Author(s): H. Schmid , M. Borg , K. Moselund , L. Gignac , C. M. Breslin , J. Bruley , D. Cutaia , H. Riel

Publication date Created: June 08 2015

Publication date (Print): June 08 2015

Journal: Applied Physics Letters

Publisher: AIP Publishing

Read this article at

ScienceOpenPublisher

Bookmark

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Abstract

Related collections

Most cited references 24

Record: found
Abstract: not found
Article: not found

Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

R Chau, S Datta, M. Doczy … (2005)

0 comments Cited 109 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: not found
Article: not found

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

J. M. Woodall, E. Fitzgerald, P. Kirchner … (1989)

0 comments Cited 99 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: not found
Article: not found

GaP-nucleation on exact Si (001) substrates for III/V device integration

Wolfgang Stolz, Bernardette Kunert, Igor Németh … (2011)

0 comments Cited 73 times – based on 0 reviews      Review now

Bookmark

All references

Author and article information

Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: June 08 2015

Publication date (Print): June 08 2015

Volume: 106

Issue: 23

Page: 233101

Article

DOI: 10.1063/1.4921962

SO-VID: 12a0ef00-1408-4bb5-bc42-fc73efade8a3

History

Data availability:

Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

Read this article at

Abstract

Related collections

Model Reduction of Parametrized Systems 2015

Most cited references 24

Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

GaP-nucleation on exact Si (001) substrates for III/V device integration

Author and article information

Journal

Article

History

Comments

Comment on this article

Similar content 238

Cited by 59

Most referenced authors 289