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      Field effect transistor research conducted in the Yamamoto Group

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      Science Impact, Ltd.

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          Abstract

          In today's technology-driven society, electronic devices such as smart phones, PCs, TVs and even cars have become an integral part of our lives. These devices all contain many small electronic elements required to perform critical functions and the development of this technology is directed towards creating components that are smaller and faster. FETs are small, yet critical, components present in the majority of our electronic devices, responsible for switching circuits on and off, amplifying signals and acting as resistors. However, the commonly-used metal oxide semiconductor FETs (MOS-FETs) have several obstacles that prevent further development, forcing many researchers to turn elsewhere in their search for ways in which to improve next-generation technology. Mott-transition FETs (Mott-FETs) have been proposed as an alternative to MOS-FETs and researchers at IBM and other institutions were pursuing this avenue of research. The Yamamoto group at the Institute for Molecular Science in Japan, led by Professor Hiroshi Yamamoto, is taking this approach a step further by developing and characterising Mott-FETs based on organic molecules.

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          Author and article information

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          Impact
          impact
          Science Impact, Ltd.
          2398-7073
          June 13 2019
          June 13 2019
          : 2019
          : 5
          : 15-17
          Article
          10.21820/23987073.2019.5.15
          © 2019

          This work is licensed under a Creative Commons Attribution 4.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

          Earth & Environmental sciences, Medicine, Computer science, Agriculture, Engineering

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