Field effect transistor research conducted in the Yamamoto Group

Abstract

In today's technology-driven society, electronic devices such as smart phones, PCs, TVs and even cars have become an integral part of our lives. These devices all contain many small electronic elements required to perform critical functions and the development of this technology is directed towards creating components that are smaller and faster. FETs are small, yet critical, components present in the majority of our electronic devices, responsible for switching circuits on and off, amplifying signals and acting as resistors. However, the commonly-used metal oxide semiconductor FETs (MOS-FETs) have several obstacles that prevent further development, forcing many researchers to turn elsewhere in their search for ways in which to improve next-generation technology. Mott-transition FETs (Mott-FETs) have been proposed as an alternative to MOS-FETs and researchers at IBM and other institutions were pursuing this avenue of research. The Yamamoto group at the Institute for Molecular Science in Japan, led by Professor Hiroshi Yamamoto, is taking this approach a step further by developing and characterising Mott-FETs based on organic molecules.

Journal

Title: Impact

Abbreviated Title: impact

Publisher: Science Impact, Ltd.

ISSN (Print): 2398-7073

Publication date Created: June 13 2019

Publication date (Print): June 13 2019

Volume: 2019

Issue: 5

Pages: 15-17

Article

DOI: 10.21820/23987073.2019.5.15

Copyright statement: © 2019

License:

This work is licensed under a Creative Commons Attribution 4.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Product

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