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Photoeffects in Nonuniformly Irradiated p‐n Junctions
Author(s):
Gerald Lucovsky
Publication date
Created:
June 1960
Publication date
(Print):
June 1960
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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3
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A New Semiconductor Photocell Using Lateral Photoeffect
J. Wallmark
(1957)
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Narrow Base Germanium Photodiodes
R. Rediker
,
D. Sawyer
(1958)
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Anomalous Electrical Properties of p‐Type Indium Arsenide
Jack Dixon
(1959)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
June 1960
Publication date (Print):
June 1960
Volume
: 31
Issue
: 6
Pages
: 1088-1095
Article
DOI:
10.1063/1.1735750
SO-VID:
14473be1-afd3-4f0c-937f-d65366623705
Copyright ©
© 1960
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