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      Photoeffects in Nonuniformly Irradiated p‐n Junctions

      Journal of Applied Physics
      AIP Publishing

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          A New Semiconductor Photocell Using Lateral Photoeffect

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            Narrow Base Germanium Photodiodes

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              Anomalous Electrical Properties of p‐Type Indium Arsenide

              Jack Dixon (1959)

                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                June 1960
                June 1960
                : 31
                : 6
                : 1088-1095
                Article
                10.1063/1.1735750
                14473be1-afd3-4f0c-937f-d65366623705
                © 1960
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