A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers

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Journal

Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 00189383

Publication date (Print): Oct. 2001

Volume: 48

Issue: 10

Pages: 2428-2433

Article

DOI: 10.1109/16.954488

SO-VID: 14a46172-4f9d-498e-8420-033044abe89c

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