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      Deep-level optical spectroscopy in GaAs

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      Physical Review B
      American Physical Society (APS)

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          Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

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            Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs

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              Electron traps in bulk and epitaxial GaAs crystals

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                May 1981
                May 1981
                : 23
                : 10
                : 5335-5359
                Article
                10.1103/PhysRevB.23.5335
                158956bb-c301-4f07-9915-d07cd895db4f
                © 1981

                http://link.aps.org/licenses/aps-default-license

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