3
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si(100)

      ,
      Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
      American Vacuum Society

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references41

          • Record: found
          • Abstract: not found
          • Article: not found

          Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids

            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

                Bookmark

                Author and article information

                Journal
                Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
                Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
                American Vacuum Society
                0734-2101
                1520-8559
                March 1999
                March 1999
                : 17
                : 2
                : 325-331
                Article
                10.1116/1.581591
                15b56b91-1a4f-49b0-b834-866d61f52c02
                © 1999
                History

                Comments

                Comment on this article