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      Laser liftoff of gallium arsenide thin films

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      MRS Communications
      Cambridge University Press (CUP)

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          Abstract

          Abstract

          The high cost of single-crystal III–V substrates limits the use of gallium arsenide (GaAs) and related sphalerite III–V materials in many applications, especially photovoltaics. However, by making devices from epitaxially grown III–V layers that are separated from a growth substrate, one can recycle the growth substrate to reduce costs. Here, we show damage-free removal of an epitaxial single-crystal GaAs film from its GaAs growth substrate using a laser that is absorbed by a smaller band gap, pseudomorphic indium gallium arsenide nitride layer grown between the substrate and the GaAs film. The liftoff process transfers the GaAs film to a flexible polymer substrate, and the transferred GaAs layer is indistinguishable in structural quality from its growth substrate.

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          Most cited references13

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          InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

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            Damage-free separation of GaN thin films from sapphire substrates

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              Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

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                Author and article information

                Journal
                applab
                MRS Communications
                MRC
                Cambridge University Press (CUP)
                2159-6859
                2159-6867
                March 2015
                February 12 2015
                : 5
                : 01
                : 1-5
                Article
                10.1557/mrc.2015.2
                1638ba4a-238b-480c-9852-31942a888caa
                © 2015
                History

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