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      Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

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      Journal: Surface Science Reports
      Publisher: Elsevier BV

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          Nucleation and growth of thin films

          J A Venables, G Spiller, M Hanbucken (1984)
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            Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

            D. J. Eaglesham, M Cerullo (1990)
            Article 0 comments Cited 431 times – based on 0 reviews     Review now
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              7 × 7 Reconstruction on Si(111) Resolved in Real Space

              G. Binnig, H Rohrer, Ch. Gerber … (1983)
              Article 0 comments Cited 373 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Surface Science Reports
                Abbreviated Title: Surface Science Reports
                Publisher: Elsevier BV
                ISSN (Print): 01675729
                Publication date Created: September 2001
                Publication date (Print): September 2001
                Volume: 43
                Issue: 5-8
                Pages: 127-254
                Article
                DOI: 10.1016/S0167-5729(01)00012-7
                SO-VID: 16cb9b16-ba05-442c-8aab-dd681c46ad1a
                Copyright © © 2001
                License:

                http://www.elsevier.com/tdm/userlicense/1.0/

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