Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

Pereira, L.; Barquinha, P; Fortunato, E.; Martins, R.

doi:10.1016/j.tsf.2005.01.045

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Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

Author(s): L. Pereira , P. Barquinha , E. Fortunato , R. Martins

Publication date Created: September 2005

Publication date (Print): September 2005

Journal: Thin Solid Films

Publisher: Elsevier BV

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Title: Thin Solid Films

Abbreviated Title: Thin Solid Films

Publisher: Elsevier BV

ISSN (Print): 00406090

Publication date Created: September 2005

Publication date (Print): September 2005

Volume: 487

Issue: 1-2

Pages: 102-106

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DOI: 10.1016/j.tsf.2005.01.045

SO-VID: 16e83630-7a78-40b2-b294-045c92f63df9

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https://www.elsevier.com/tdm/userlicense/1.0/

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Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

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