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      Time- and spatially-resolved magnetization dynamics driven by spin-orbit torques

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          Abstract

          Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong damping, and the large domain wall velocities inherent to materials with strong spin-orbit coupling make SOTs especially appealing for fast switching applications in nonvolatile memory and logic units. So far, however, the timescale and evolution of the magnetization during the switching process have remained undetected. Here, we report the direct observation of SOT-driven magnetization dynamics in Pt/Co/AlO\(_x\) dots during current pulse injection. Time-resolved x-ray images with 25 nm spatial and 100 ps temporal resolution reveal that switching is achieved within the duration of a sub-ns current pulse by the fast nucleation of an inverted domain at the edge of the dot and propagation of a tilted domain wall across the dot. The nucleation point is deterministic and alternates between the four dot quadrants depending on the sign of the magnetization, current, and external field. Our measurements reveal how the magnetic symmetry is broken by the concerted action of both damping-like and field-like SOT and show that reproducible switching events can be obtained for over \(10^{12}\) reversal cycles.

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          Spin torque switching with the giant spin Hall effect of tantalum

          We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.
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            Spin Hall effects

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              Theory of nonequilibrium intrinsic spin torque in a single nanomagnet

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                Author and article information

                Journal
                2017-04-21
                Article
                1704.06402
                1713344d-40d4-4901-acb2-9983c4236fac

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                Custom metadata
                cond-mat.mtrl-sci cond-mat.mes-hall

                Condensed matter,Nanophysics
                Condensed matter, Nanophysics

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