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      Enhancement of magnetism by structural phase transition in MoS2

      1 , 2 , 1 , 1 , 3 , 3 , 1 , 1

      Applied Physics Letters

      AIP Publishing

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          Emerging photoluminescence in monolayer MoS2.

          Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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            Atomically thin MoS2: A new direct-gap semiconductor

            The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 1000 compared with the bulk material.
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              Single-Layer MoS2 Phototransistors

               Hong Li,  Hai Li,  Zongyou Yin (2013)
              A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multi-functional optoelectronic device applications in future.
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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                January 05 2015
                January 05 2015
                : 106
                : 1
                : 012408
                Affiliations
                [1 ]Nanjing National Laboratory of Microstructures and Jiangsu Provincial Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, People's Republic of China
                [2 ]College of Science, Henan University of Technology, Zhengzhou 450001, People's Republic of China
                [3 ]Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China
                Article
                10.1063/1.4905656
                17987b74-1e27-4f62-93e1-ae2893e16bd6
                © 2015
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